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Carlsson, Jan-Otto
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Publications (10 of 62) Show all publications
Lindahl, E., Ottosson, M. & Carlsson, J.-O. (2018). Doping of metastable Cu3N at different Ni concentrations: Growth, crystallographic sites and resistivity. Thin Solid Films, 647, 1-8
Open this publication in new window or tab >>Doping of metastable Cu3N at different Ni concentrations: Growth, crystallographic sites and resistivity
2018 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 647, p. 1-8Article in journal (Refereed) Published
Abstract [en]

Copper nitride, Cu3N, is a metastable material whose properties can be changed considerably by doping with metals which opens for a variety of applications in several areas (sensors, electrical connects, batteries, memories, etc.). The present work is a systematic study in the system Cu-Ni-N of preferences regarding occupation of interstitial and substitutional crystallographic sites in the Cu3N structure as the metal dopant level increases and how the occupation influences growth behavior, texture, microstructure and resistivity. Ni doped Cu3N films of different chemical composition were grown by a gas-pulsed Chemical Vapor Deposition technique. The occupation of the different crystallographic sites of the Cu3N by the Ni atoms was obtained from analysis of X-ray diffraction data. At low Ni content, less than about 21% in metal content, Ni replaced the Cu atoms in the structure. In the intermediate Ni metal content range from about 21 to 40% the vacant centre position became available. After filling the centre position, substitution of Cu for Ni occurred up to a Ni content of about 80% (Cu0.8Ni3.2N) which is the solid solubility limit of Ni in Cu3N. The film resistivity decreased rapidly by adding nickel to the Cu3N structure from about 10(9)mu Omega.cm without any Ni doping to about 100 mu Omega.cm with 80% Ni in the metal content. After filling the centre position the change in resistivity when Cu atoms were substituted for Ni was very small. Finally, the growth mechanism, texture and microstructure changed significantly with the uptake of Ni atoms in the structure.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE SA, 2018
Keywords
Copper nitride, Metal doping, Solid solubility, Cell parameters, Resistivity, Growth mechanism, Microstructure
National Category
Inorganic Chemistry
Identifiers
urn:nbn:se:uu:diva-341567 (URN)10.1016/j.tsf.2017.12.010 (DOI)000419649200001 ()
Funder
Swedish Research Council, 7048301
Available from: 2018-02-12 Created: 2018-02-12 Last updated: 2018-02-12Bibliographically approved
Jogi, I., Jacobsson, T. J., Fondell, M., Watjen, T., Carlsson, J.-O., Boman, M. & Edvinsson, T. (2015). Phase Formation Behavior in Ultrathin Iron Oxide. Langmuir, 31(45), 12372-12381
Open this publication in new window or tab >>Phase Formation Behavior in Ultrathin Iron Oxide
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2015 (English)In: Langmuir, ISSN 0743-7463, E-ISSN 1520-5827, Vol. 31, no 45, p. 12372-12381Article in journal (Refereed) Published
Abstract [en]

Nanostructured iron oxides, and especially hematite, are interesting for a wide range of applications ranging from gas sensors to renewable solar hydrogen production. A promising method for deposition of low-dimensional films is atomic layer deposition (ALD). Although a potent technique, ALD of ultrathin films is critically sensitive to the substrate and temperature conditions where initial formation of islands and crystallites influences the properties of the films. In this work, deposition at the border of the ALD window forming a hybrid ALD/pulsed CVD (pCVD) deposition is utilized to obtain a deposition less sensitive to the substrate. A thorough analysis of iron oxide phases formation on two different substrates, Si(100) and SiO2, was performed. Films between 3 and SO rim were deposited and analyzed with diffraction techniques, high-resolution Raman spectroscopy, and optical spectroscopy. Below 10 nm nominal film thickness, island formation and phase dependent particle crystallization impose constraints for deposition of phase pure iron oxides on non-lattice-matching substrates. Films between 10 and 20 nm thickness on SiO2 could effectively be recrystallized into hematite whereas for the corresponding films on Si(100), no recrystallization occurred. For films thicker than 20 nm, phase pure hematite can be formed directly with ALD/pCVD with very low influence of the substrate on either Si or SiO2. For more lattice matched substrates such as SnO2:F, Raman spectroscopy indicated formation of the hematite phase already for films with 3 rim nominal thickness and clearly for 6 nm films. Analysis of the optical properties corroborated the analysis and showed a quantum confined blue-shift of the absorption edge for the thinnest films.

National Category
Inorganic Chemistry Materials Chemistry Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-269973 (URN)10.1021/acs.langmuir.5b03376 (DOI)000365150700007 ()26506091 (PubMedID)
Funder
Swedish Energy AgencyCarl Tryggers foundation ÅForsk (Ångpanneföreningen's Foundation for Research and Development)
Available from: 2015-12-19 Created: 2015-12-19 Last updated: 2017-12-01Bibliographically approved
Lindahl, E., Ottosson, M. & Carlsson, J.-O. (2012). Gas-Pulsed CVD for Film Growth in the Cu-Ni-N System. Chemical Vapor Deposition, 18(1-3), 10-16
Open this publication in new window or tab >>Gas-Pulsed CVD for Film Growth in the Cu-Ni-N System
2012 (English)In: Chemical Vapor Deposition, ISSN 0948-1907, E-ISSN 1521-3862, Vol. 18, no 1-3, p. 10-16Article in journal (Refereed) Published
Abstract [en]

A new ternary solid solution, Cu3-xNix+yN, is prepared by gas-pulsed CVD at 260 degrees C. Gas pulses of the precursor mixtures Cu(hfac)2+NH3 and Ni(thd)2+NH3, separated by intermittent ammonia pulses, are employed for the deposition of Cu3N and Ni3N, respectively. A few monolayers of the nitrides are grown in each CVD pulse and then mixed by diffusion to produce the solid solution. The metal content of the solid solution can be varied continuously from 100% to about 20% Cu, which means that the electrical properties can be varied from 1.6eV (band gap of Cu3N) to metallic (Ni3N). This is of interest for various applications, e.g., solar energy, catalysis, and microelectronics.

Keywords
Cu3-xNix+yN, Cu?Ni?N system, Gas-pulsed CVD, Metastable nitrides
National Category
Inorganic Chemistry
Research subject
Chemistry with specialization in Inorganic Chemistry
Identifiers
urn:nbn:se:uu:diva-172717 (URN)10.1002/cvde.201106919 (DOI)000301575100004 ()
Available from: 2012-12-13 Created: 2012-04-13 Last updated: 2017-12-06Bibliographically approved
Lindahl, E., Ottosson, M. & Carlsson, J.-O. (2010). Growth and stability of CVD Ni3N and ALD NiO dual layers. Surface & Coatings Technology, 205(3), 710-716
Open this publication in new window or tab >>Growth and stability of CVD Ni3N and ALD NiO dual layers
2010 (English)In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 205, no 3, p. 710-716Article in journal (Refereed) Published
National Category
Inorganic Chemistry
Research subject
Chemistry with specialization in Inorganic Chemistry
Identifiers
urn:nbn:se:uu:diva-111456 (URN)10.1016/j.surfcoat.2010.07.059 (DOI)000282997400004 ()
Available from: 2009-12-15 Created: 2009-12-15 Last updated: 2017-12-12Bibliographically approved
Lindahl, E., Ottosson, M. & Carlsson, J.-O. (2010). In situ study of nickel formation during decomposition of chemical vapor deposition Ni3N films. Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, 28(5), 1203-1209
Open this publication in new window or tab >>In situ study of nickel formation during decomposition of chemical vapor deposition Ni3N films
2010 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 28, no 5, p. 1203-1209Article in journal (Refereed) Published
Abstract [en]

The thermal decomposition of Ni3N thin films, deposited by chemical vapor deposition on SrTiO3 (001) and Si (100) substrates, has been studied by in situ x-ray diffraction, as well as temperature-programed controlled gas emission in both inert and hydrogen atmospheres. The decomposition at inert atmosphere conditions starts at the film/substrate interface, which results in a high degree of ordering in the formed nickel film. In the H-2 atmosphere, the initial film ordering is less pronounced and the decomposition occurs from the film surface and downward. This means that by choosing the annealing atmosphere, inert or hydrogen, the formation of the Ni film can be localized to either the original nitride/substrate interface or to the surface of the nitride. The annealed films show a cube-on-cube growth with respect to the SrTiO3 (001) substrate. The film morphology after the annealing experiments resembles the one of the as-deposited films. The lowest resistivity value is measured for the films annealed in the H-2 atmosphere. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3478298]

National Category
Inorganic Chemistry
Research subject
Chemistry with specialization in Inorganic Chemistry
Identifiers
urn:nbn:se:uu:diva-133857 (URN)10.1116/1.3478298 (DOI)000282230400025 ()
Available from: 2010-11-16 Created: 2010-11-16 Last updated: 2017-12-12Bibliographically approved
Törndahl, T., Ottosson, M. & Carlsson, J.-O. (2006). Growth of Copper(I) Nitride by ALD Using Copper(II) Hexafluoroacetylacetonate, Water and Ammonia as Precursors. Journal of the Electrochemical Society, 153(3), C146-C151
Open this publication in new window or tab >>Growth of Copper(I) Nitride by ALD Using Copper(II) Hexafluoroacetylacetonate, Water and Ammonia as Precursors
2006 (English)In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 153, no 3, p. C146-C151Article in journal (Other academic) Published
Abstract [en]

Films of copper(I) nitride were deposited by atomic layer deposition (ALD) using copper(II) hexafluoroacetylacetonate, water, and ammonia as precursors. Introduction of a water pulse in the ALD cycle was found to be crucial for initiating film growth on both amorphous SiO2 and single-crystalline α-Al2O3(001) substrates. The water pulses generated an oxidic copper monolayer, which in a subsequent ammonia pulse was converted to the nitride. The films have been grown in the temperature range from 210to302°C . Phase pure films of Cu3N were obtained up to 265°C . At higher deposition temperatures such as 283°C , phase mixtures of Cu3N and Cu were obtained. For temperatures above 302°C films of only Cu were grown. Film growth rate was the same on the two different substrates. The films were randomly oriented on SiO2 . Completely intact films were obtained at a thickness of 20nm . The optical bandgap of the films was measured to be 1.6eV .

National Category
Inorganic Chemistry
Identifiers
urn:nbn:se:uu:diva-92339 (URN)10.1149/1.2160427 (DOI)000235136600042 ()
Note

Manuscript title: Growth of copper(I) nitride by atomic layer deposition using copper(II) hexafluoroacetylacetonate, water and ammonia as precursors

Available from: 2004-11-04 Created: 2004-11-04 Last updated: 2019-05-28Bibliographically approved
Mecea, V. M., Carlsson, J.-O., Alm, O. & Boman, M. (2006). Out-of-plane vibrations of quartz resonators used in quartz crystal microbalance measurements in gas phase. Sensors and Actuators A, 125(2), 143-147
Open this publication in new window or tab >>Out-of-plane vibrations of quartz resonators used in quartz crystal microbalance measurements in gas phase
2006 (English)In: Sensors and Actuators A, Vol. 125, no 2, p. 143-147Article in journal (Refereed) Published
Abstract [en]

The article reveals that shear-mode quartz crystal resonators, currently used in quartz crystal microbalance (QCM) measurements, exhibit an out-of-plane vibration without being in contact with a liquid. Laser assisted CVD was used to deposit carbon-nanoparticles on the surface of a quartz resonator. The in-plane, shear vibration of the quartz resonator, produces a mega-gravity acceleration which induces a sedimentation of the carbon-nanoparticles, while the out-of-plane vibration produces a mega-gravity acceleration, normal to the crystal surface, which induces an expelling of the deposited carbon-nanoparticles. The two opposite effects reveal a complex situation on the quartz resonator surface in QCM measurements.

Keywords
Quartz, Vibration, QCM, Acceleration, Mega-gravity
National Category
Inorganic Chemistry
Identifiers
urn:nbn:se:uu:diva-75173 (URN)doi:10.1016/j.sna.2005.06.016 (DOI)
Available from: 2006-01-23 Created: 2006-01-23 Last updated: 2011-01-11
Lu, J., Aarik, J., Sundqvist, J., Kukli, K., Hårsta, A. & Carlsson, J.-O. (2005). Analytical TEM characterization of the interfacial layer between ALD Hf02 film and silicon substrate. Journal of Crystal Growth (273), 510-514
Open this publication in new window or tab >>Analytical TEM characterization of the interfacial layer between ALD Hf02 film and silicon substrate
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2005 (English)In: Journal of Crystal Growth, no 273, p. 510-514Article in journal (Refereed) Published
Abstract [en]

High-resolution transmission electron microscopy and electron energy loss spectrometry were used to characterize

the interfacial layer formed between the silicon substrate and the HfO2 thin film grown by atomic layer deposition (ALD) from HfIU4 and O2. The interfacial layer was amorphous and contained SiO2 mixed with a small amount of elemental Si on the atomic level. The interfacial silicon oxide layer was mainly deposited at the beginning of the ALD process since its thickness was insensitive to the number of applied ALD cycles when increased from 50 to 1000.

Keywords
Electron energy loss spectroscopy, Atomic layer deposition, HfO2, Silicon oxide
National Category
Inorganic Chemistry
Identifiers
urn:nbn:se:uu:diva-67639 (URN)
Available from: 2004-12-22 Created: 2004-12-22 Last updated: 2011-01-12
Törndahl, T., Lu, J., Ottosson, M. & Carlsson, J.-O. (2005). Epitaxy of copper on α-Al2O3(0 0 1) by atomic layer deposition. Journal of Crystal Growth, 276, 102-110
Open this publication in new window or tab >>Epitaxy of copper on α-Al2O3(0 0 1) by atomic layer deposition
2005 (English)In: Journal of Crystal Growth, Vol. 276, p. 102-110Article in journal (Refereed) Published
Abstract [en]

A combined X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM) study have been carried out on copper films grown by atomic layer deposition at 400 °C. The copper films have been grown on single crystalline (0 0 1) oriented α-Al2O3 up to a thickness of 500 nm. The films were relaxed and the diffraction peak broadening in 2θ was mainly dependent on the copper grain size. Broadening of the diffraction peaks in ω was found to be related to defects (mosaicity and intrinsic microstrain). The deposited films were epitaxial and grew with the (1 1 1) plane in parallel to the substrate surface. Extensive twinning in the copper grains in different Cu1 1 1 directions occurred according to the TEM study, both in directions perpendicular to the substrate surface ([1 1 1] and ) and along other 1 1 1 directions as well. As an effect of a twin, an extra Cu(5 1 1) orientation was present in the XRD data.

Keywords
Epitaxial, Atomic layer epitaxy, Copper, Sapphire
National Category
Inorganic Chemistry
Identifiers
urn:nbn:se:uu:diva-73755 (URN)doi:10.1016/j.jcrysgro.2004.10.153 (DOI)
Available from: 2005-06-16 Created: 2005-06-16 Last updated: 2011-01-11
Ottosson, M., Törndahl, T. & Carlsson, J.-O. (2005). In-situ quartz crystal microbalance investigation of atomic layer deposition of Cu3N. In: Electrochemical Society v. PV 2005-09 EUROCVD-15: Fifteenth European Conference on Chemical Vapor Deposition (pp. 591-597).
Open this publication in new window or tab >>In-situ quartz crystal microbalance investigation of atomic layer deposition of Cu3N
2005 (English)In: Electrochemical Society v. PV 2005-09 EUROCVD-15: Fifteenth European Conference on Chemical Vapor Deposition, 2005, p. 591-597Conference paper, Published paper (Refereed)
National Category
Inorganic Chemistry
Identifiers
urn:nbn:se:uu:diva-76384 (URN)
Note
Cu3N is a promising material for optical data storage and copper metallisation. Upon heating the metastable Cu3N decomposes into metallic copper and nitrogen gas. Films have been grown with a novel ALD (Atomic Layer Deposition) process using copper(II) hexafluoroacetylacetonate (Cu(hfac)2), water and ammonia as precursors. By adding an intermediate water pulse the growth rate was enhanced on oxide substrates. The water was used with the purpose of producing sacrificial oxide layers. The mass changes during the deposition cycles were measured by in-situ Quartz Crystal Microbalance (QCM) technique. Extensive hfac removal was observed during Cu(hfac)2 adsorption, yielding a surface composition of Cu(hfac) 0.4 (ad) for short pulses.Available from: 2006-12-13 Created: 2006-12-13
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