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Enlund, Johannes
Publications (10 of 10) Show all publications
Enlund, J., Martin, D., Yantchev, V. & Katardjiev, I. (2008). Solidly mounted thin film electro-acoustic resonator utilizing a conductive Bragg reflector. Sensors and Actuators A-Physical, 141(2), 598-602
Open this publication in new window or tab >>Solidly mounted thin film electro-acoustic resonator utilizing a conductive Bragg reflector
2008 (English)In: Sensors and Actuators A-Physical, ISSN 0924-4247, E-ISSN 1873-3069, Vol. 141, no 2, p. 598-602Article in journal (Refereed) Published
Abstract [en]

A new design of a solidly mounted resonator (SMR) that utilizes an all-metal Bragg reflector eliminating thus the need for a bottom electrode is proposed. In this configuration, the role of the bottom electrode is taken by the Bragg reflector rendering the resonator “combined electrode-Bragg reflector SMR”. The main advantages of the proposed design are the substantially reduced electrode resistance (and hence higher Q), the utilization of the full piezoelectric coupling at high frequencies as well as expected improvement in power handling capabilities due to lower dissipation and improved heat conductivity. Resonators with the classical and the new design have been fabricated and evaluated. The measurements indicate that indeed the resonators with the new design demonstrate improved performance.

Keywords
Micromachined acoustic resonator, AlN, Bragg reflector, Equivalent circuit
National Category
Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-13019 (URN)10.1016/j.sna.2007.09.002 (DOI)000253734900048 ()
Projects
WISENETICTEA (SSF)
Available from: 2008-01-21 Created: 2008-01-21 Last updated: 2017-12-11Bibliographically approved
Martin, D., Enlund, J., Kappertz, O. & Jensen, J. (2007). Comparing XPS and ToF-ERDA measurement of high-k dielectric materials. In: : . Paper presented at 17th International Vacuum Conference (IVC-17), 13th International Conference on Surface science (ICSS-13), International Conference on Nanoscience and Technology 2007 (ICN+T 2007) Stockholm, Sweden, July 2-6 (2007) publ in Journal of Physics: Conference Series.
Open this publication in new window or tab >>Comparing XPS and ToF-ERDA measurement of high-k dielectric materials
2007 (English)Conference paper, Published paper (Refereed)
National Category
Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-12732 (URN)
Conference
17th International Vacuum Conference (IVC-17), 13th International Conference on Surface science (ICSS-13), International Conference on Nanoscience and Technology 2007 (ICN+T 2007) Stockholm, Sweden, July 2-6 (2007) publ in Journal of Physics: Conference Series
Available from: 2008-01-11 Created: 2008-01-11 Last updated: 2016-04-11Bibliographically approved
Martin, D., Enlund, J., Kappertz, O. & Jensen, J. (2006). Compositional characterization of high-k dielectric material via XPS and ToF-ERDA. In: : . Paper presented at The AVS 53rd International Symposium, November 12-17, San Francisco, USA.
Open this publication in new window or tab >>Compositional characterization of high-k dielectric material via XPS and ToF-ERDA
2006 (English)Conference paper, Published paper (Other (popular science, discussion, etc.))
National Category
Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-25568 (URN)
Conference
The AVS 53rd International Symposium, November 12-17, San Francisco, USA
Available from: 2007-03-08 Created: 2007-03-08 Last updated: 2016-07-12
Yantchev, V., Enlund, J., Bjurström, J. & Katardjiev, I. (2006). Design of high frequency piezoelectric resonators utilizing laterally propagating fast modes in thin aluminum nitride (AlN) films. Ultrasonics, 45(1-4), 208-212
Open this publication in new window or tab >>Design of high frequency piezoelectric resonators utilizing laterally propagating fast modes in thin aluminum nitride (AlN) films
2006 (English)In: Ultrasonics, ISSN 0041-624X, E-ISSN 1874-9968, Vol. 45, no 1-4, p. 208-212Article in journal (Refereed) Published
Abstract [en]

Highly c-oriented aluminum nitride (AlN) thin piezoelectric films have been grown by pulsed direct-current (DC) magnetron reactive sputter deposition. The films were deposited at room temperature and had a typical full width half maximum (FWHM) value of the (0 0 2) rocking curve of around 2°. Resonant devices in thin film plates having surface acoustic wave (SAW) based designs were fabricated by means of low resolution photolithography. The devices were designed to operate with the fast Rayleigh and Lamb modes respectively. Both types of devices exhibited propagation velocities in excess of 10 000 m/s and sufficient electromechanical couplings. The device measurements illustrate the big potential of these modes for the development of low cost IC compatible electroacoustic devices in the lower GHz range. The basic properties of the modes studied are discussed in a comparative manner. Potential commercial applications are also outlined.

Keywords
AlN, Resonator, SAW, Lamb, Sputtering, Integrated devices
National Category
Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-23528 (URN)10.1016/j.ultras.2006.09.008 (DOI)000243241800025 ()
Available from: 2007-01-30 Created: 2009-01-26 Last updated: 2017-12-07Bibliographically approved
Enlund, J., Yantchev, V. & Katardjiev, I. (2006). Electric Field Sensitivity of Thin Film Resonators Based on Piezoelectric AlN thin films. In: : . Paper presented at IEEE Int. Ultrasonics. Symposium, 3-6 Oct, Vancouver, Canada. IEEE
Open this publication in new window or tab >>Electric Field Sensitivity of Thin Film Resonators Based on Piezoelectric AlN thin films
2006 (English)Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
IEEE, 2006
National Category
Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-23543 (URN)
Conference
IEEE Int. Ultrasonics. Symposium, 3-6 Oct, Vancouver, Canada
Available from: 2007-01-30 Created: 2009-01-26 Last updated: 2016-06-22Bibliographically approved
Katardjiev, I., Bjurström, J., Yantchev, V., Wingqvist, G., Enlund, J. & Martin, D. (2006). Recent advances in the thin film electroacoustic technology. In: : . Paper presented at Micro Structure Workshop MSW 2006, Västerås, Sweden.
Open this publication in new window or tab >>Recent advances in the thin film electroacoustic technology
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2006 (English)Conference paper, Published paper (Refereed)
National Category
Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-25874 (URN)
Conference
Micro Structure Workshop MSW 2006, Västerås, Sweden
Available from: 2007-02-14 Created: 2007-02-14 Last updated: 2016-07-12Bibliographically approved
Norling, M., Enlund, J., Katardjiev, I. & Gevorgian, S. (2005). A 2 GHz oscillator based on a solidly mounted thin film bulk acoustic wave resonator. In: Proc of the IEEE MMT-S, International microwave symposium.
Open this publication in new window or tab >>A 2 GHz oscillator based on a solidly mounted thin film bulk acoustic wave resonator
2005 (English)In: Proc of the IEEE MMT-S, International microwave symposium, 2005Conference paper, Published paper (Other scientific)
Identifiers
urn:nbn:se:uu:diva-75888 (URN)
Available from: 2006-03-10 Created: 2006-03-10
Enlund, J., Katardjiev, I. & Martin, D. (2005). An improved electrodeless solidly mounter thin film resonator. In: Proc Int IEEE Ultrason Symp.
Open this publication in new window or tab >>An improved electrodeless solidly mounter thin film resonator
2005 (English)In: Proc Int IEEE Ultrason Symp, 2005Conference paper, Published paper (Other scientific)
Identifiers
urn:nbn:se:uu:diva-75876 (URN)
Available from: 2006-03-10 Created: 2006-03-10
Enlund, J., Isberg, J., Karlsson, M., Nikolajeff, F., Olsson, J. & Twitchen, D. J. (2005). Anisotropic dry etching of boron doped single crystal CVD diamond. Carbon, 43(9), 1839-1842
Open this publication in new window or tab >>Anisotropic dry etching of boron doped single crystal CVD diamond
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2005 (English)In: Carbon, ISSN 0008-6223, E-ISSN 1873-3891, Vol. 43, no 9, p. 1839-1842Article in journal (Refereed) Published
Abstract [en]

Semiconducting boron doped single-crystal CVD diamond has been patterned using aluminum masks and an inductively coupled plasma (ICP) etch system. For comparison insulating HPHT diamond samples were also patterned using the same process. Diamond etch rates above 200 nm/min were obtained with an O2/Ar discharge for a gas pressure of 2.5 mTorr using 600 W RF power. We have accomplished the fabrication of structures with a minimum feature size of 1 μm with vertical sidewalls in both CVD and HPHT diamond. The ICP etching produced smooth surfaces with a typical root-mean-square surface roughness of 3 nm. The dependence of etch rate on bias voltage was somewhat different for the two types of diamond. However, for all samples both the etch rate and anisotropy were found to improve with increasing bias voltage.

National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:uu:diva-74101 (URN)10.1016/j.carbon.2005.02.022 (DOI)
Available from: 2007-01-23 Created: 2007-01-23 Last updated: 2017-12-14
Yantchev, V., Bjurström, J., Katardjiev, I. & Enlund, J. (2005). Electroacoustic Devices utilizing the Lower GHz Frequency band based on High-velocity Laterally propagating Modes in c-oriented AlN thin film membranes -: a Comparative Study. In: Proc. 2005 Gigahertz Symp., Uppsala, Sweden, October 2005.
Open this publication in new window or tab >>Electroacoustic Devices utilizing the Lower GHz Frequency band based on High-velocity Laterally propagating Modes in c-oriented AlN thin film membranes -: a Comparative Study
2005 (English)In: Proc. 2005 Gigahertz Symp., Uppsala, Sweden, October 2005, 2005Conference paper, Published paper (Other academic)
Identifiers
urn:nbn:se:uu:diva-75923 (URN)
Available from: 2006-03-10 Created: 2006-03-10 Last updated: 2010-02-17Bibliographically approved
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