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Martin, David
Alternative names
Publications (10 of 29) Show all publications
Jensen, J., Martin, D., Surpi, A. & Kubart, T. (2010). ERD analysis and modification of TiO2 thin films with heavy ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 268(11-12), 1893-1898
Open this publication in new window or tab >>ERD analysis and modification of TiO2 thin films with heavy ions
2010 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 268, no 11-12, p. 1893-1898Article in journal (Refereed) Published
Keywords
Titanium dioxide, Thin films, Ion beam analysis, Elastic recoil detection, Ion beam modification
National Category
Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-126509 (URN)10.1016/j.nimb.2010.02.051 (DOI)000278702300044 ()
Available from: 2010-06-15 Created: 2010-06-15 Last updated: 2017-12-12Bibliographically approved
Enlund, J., Martin, D. M., Yantchev, V. & Katardjiev, I. (2010). FBAR sensor array for in liquid operation. IEEE Sensors Journal, 10(12), 1903-1904
Open this publication in new window or tab >>FBAR sensor array for in liquid operation
2010 (English)In: IEEE Sensors Journal, ISSN 1530-437X, E-ISSN 1558-1748, Vol. 10, no 12, p. 1903-1904Article in journal (Refereed) Published
Abstract [en]

This letter discusses the design of thickness shear mode thin-film bulk acoustic resonator (FBAR) sensor array for in liquid operation with respect to minimizing the observed Q-degradation and crosstalk.

Keywords
Aluminumnitride; biomedical transducers; bulk acoustic wave (BAW) devices; crosstalk
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:uu:diva-130118 (URN)10.1109/JSEN.2010.2051944 (DOI)000283444900006 ()
Projects
WISENET
Note

Electronically published since May 11, 2010

Available from: 2010-09-01 Created: 2010-09-01 Last updated: 2017-12-12Bibliographically approved
Surpi, A., Göthelid, E., Kubart, T., Martin, D. & Jensen, J. (2010). Localised modifications of anatase TiO2 thin films by a Focused Ion Beam. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 268(19), 3142-3146
Open this publication in new window or tab >>Localised modifications of anatase TiO2 thin films by a Focused Ion Beam
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2010 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 268, no 19, p. 3142-3146Article in journal (Refereed) Published
Abstract [en]

A Focused Ion Beam (FIB) has been used to implant micrometer-sized areas of polycrystalline anatase TiO2 thin films with Ga+ ions using fluencies from 10(15) to 10(17) ions/cm(2). The evolution of the surface morphology was studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM). In addition, the chemical modifications of the surface were followed by X-ray photoelectron spectroscopy (XPS). The implanted areas show a noticeable change in surface morphology as compared to the as-deposited surface. The surface loses its grainy morphology to gradually become a smooth surface with a RMS roughness of less than 1 nm for the highest ion fluence used. The surface recession or depth of the irradiated area increases with ion fluence, but the rate with which the depth increases changes at around 5 x 10(16) ions/cm(2). Comparison with implantation of a pre-irradiated surface indicates that the initial surface morphology may have a large effect on the surface recession rate. Detailed analysis of the XPS spectra shows that the oxidation state of Ti and O apparently does not change, whereas the implanted gallium exists in an oxidation state related to Ga2O3.

Keywords
Ion implantation, Focused Ion Beam, Titanium dioxide, Galium oxide, Thin films
National Category
Physical Sciences Other Engineering and Technologies
Identifiers
urn:nbn:se:uu:diva-136492 (URN)10.1016/j.nimb.2010.05.074 (DOI)000282301100066 ()
Available from: 2010-12-14 Created: 2010-12-13 Last updated: 2017-12-11Bibliographically approved
Enlund, J., Martin, D., Yanchev, V. & Katardjiev, I. (2009). Analysis of Q-degradation and Cross-Talk in BAW Sensor Arrays Operating in Conductive Liquid Media. In: : . Paper presented at European Frequency and Time Forum and the International Frequency Control Symposium, Besancon, France, April 20-24, (2009).
Open this publication in new window or tab >>Analysis of Q-degradation and Cross-Talk in BAW Sensor Arrays Operating in Conductive Liquid Media
2009 (English)Conference paper, Published paper (Refereed)
National Category
Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-121238 (URN)
Conference
European Frequency and Time Forum and the International Frequency Control Symposium, Besancon, France, April 20-24, (2009)
Projects
WISENET
Available from: 2010-03-19 Created: 2010-03-19 Last updated: 2016-04-14Bibliographically approved
Jensen, J., Sanz, R., Martin, D., Surpi, A., Kubart, T., Vázquez, M. & Hernandez-Velez, M. (2009). Implantation of anatase thin film with 100 keV 56Fe ions: Damage formation and magnetic behaviour. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 267(16), 2725-2730
Open this publication in new window or tab >>Implantation of anatase thin film with 100 keV 56Fe ions: Damage formation and magnetic behaviour
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2009 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 267, no 16, p. 2725-2730Article in journal (Refereed) Published
Abstract [en]

We have investigated the damage morphology and magnetic properties of titanium dioxide thin films following implantation with Fe ions. The titanium dioxide films, having a polycrystalline anatase structure, were implanted with 100 keV 56Fe+ ions to a total fluence of 1.3 × 1016 ions/cm2. The ion bombardment leads to an amorphized surface with no indication of the presence of secondary phases or Fe clusters. The ion-beam induced damage manifested itself by a marked change in surface morphology and film thickness. A room temperature ferromagnetic behaviour was observed by SQUID in the implanted sample. It is believed that the ion-beam induced damage and defects in the polycrystalline anatase film were partly responsible for the observed magnetic response.

Keywords
Ion implantation, Magnetic semiconductors, Fe-doping, Titanium dioxide, Anatase, Magnetron sputtering
National Category
Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-113667 (URN)10.1016/j.nimb.2009.05.055 (DOI)000272422400039 ()0168-583X (ISBN)
Available from: 2010-02-02 Created: 2010-02-02 Last updated: 2017-12-12Bibliographically approved
Wolborski, M., Martin, D. M., Bakowski, M., Hallen, A. & Katardjiev, I. (2009). Improved Properties of AlON/4H-SiC Interface for Passivation Studies. Materials Science Forum, 600-603, 763-766
Open this publication in new window or tab >>Improved Properties of AlON/4H-SiC Interface for Passivation Studies
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2009 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 600-603, p. 763-766Article in journal (Refereed) Published
Abstract [en]

Aluminium oxynitride (AlON) films of variable composition were grown by reactive sputter deposition in a N2/O2 ambient at room temperature and studied for device passivation. The films were deposited on Si and 4H-SiC substrates as well as on SiC PiN diodes. The AlON/SiO2/SiC stack provided superior interface properties compared to the AlON/SiC structure. Samples with 8% oxygen content, in the AlON film, and subjected to a UV exposure prior to deposition, exhibited the smallest net positive interface charge. A large net negative interface charge was observed for samples with 10% oxygen content and for the samples with 8% oxygen content and subjected to a RCA1 surface clean, prior to deposition. Diodes passivated with AlON films demonstrated reduced leakage current compared to as-processed diodes.

Place, publisher, year, edition, pages
Switzerland: Trans Tech Publications, 2009
Keywords
SiC, AlN, passivation, leakage currents
National Category
Engineering and Technology
Research subject
Electronics
Identifiers
urn:nbn:se:uu:diva-100955 (URN)10.4028/www.scientific.net/MSF.600-603.763 (DOI)
Projects
WISENET
Available from: 2009-04-14 Created: 2009-04-14 Last updated: 2017-12-13Bibliographically approved
Martin, D., Smith, U., Yantchev, V., Katardjiev, I. & Olsson, J. (2009). Thick NiSi Electrodes for AlN Electroacoustic Applications. Electrochemical and solid-state letters, 12(5), H182-H184
Open this publication in new window or tab >>Thick NiSi Electrodes for AlN Electroacoustic Applications
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2009 (English)In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 12, no 5, p. H182-H184Article in journal (Refereed) Published
Abstract [en]

Theuse of thick NiSi electrodes in electroacoustic resonators allows front-endintegration with integrated circuit technology. Problems are identified in theformation of thick nickel silicide (NiSi) electrodes via a singledeposition of Ni onto blank Si wafers. An alternative fabricationprocess based on the deposition and silicidation of a multilayerfilm is presented. The films were found to have lowresistivity and smooth surfaces, with the layered structure preserved evenafter silicidation. Textured piezoelectric films of (002) wurtzite AlN demonstrateda diffraction-peak width that narrows to 3.5° when deposited ona thick 10 pair NiSi film.

Place, publisher, year, edition, pages
The Electrochemical Society, 2009
Keywords
acoustoelectric devices, aluminium compounds, electrodes, nickel alloys, piezoelectric thin films, resonators, silicon alloys, sputter deposition
National Category
Engineering and Technology
Research subject
Engineering Science with specialization in Microsystems Technology
Identifiers
urn:nbn:se:uu:diva-99095 (URN)10.1149/1.3093099 (DOI)000264283100027 ()
Projects
SSF ICTEA
Available from: 2009-03-06 Created: 2009-03-06 Last updated: 2017-12-13
Martin, D., Vallin, Ö., Katardjiev, I. & Olsson, J. (2008). Buried aluminum nitride insulator for improving thermal conduction in SOI. In: Proceedings of IEEE SOI Conference: . Paper presented at IEEE SOI Conference (pp. 105-106).
Open this publication in new window or tab >>Buried aluminum nitride insulator for improving thermal conduction in SOI
2008 (English)In: Proceedings of IEEE SOI Conference, 2008, p. 105-106Conference paper, Published paper (Refereed)
Abstract [en]

A new Si-on-AlN substrate has been fabricated and characterised both electrically and thermally. Thermal properties of the new substrate have been identified with a thermal resistance reduced by half to 47.5 K/W compared to reference SOI. Further improvements in fabrication of these new SOI substrates with regard to the alpha-Si layer, oxide layer and in AlN film quality itself would utillise the thermal conductivity of AlN even more.

Series
Proceedings - IEEE International SOI Conference, ISSN 1078-621X
Keywords
aluminium compounds, buried layers, elemental semiconductors, insulating thin films, semiconductor thin films, silicon, silicon-on-insulator, thermal conductivity, thermal resistance, SOI substrates, Si-AlN, alpha-silicon layer, aluminum nitride film, buried aluminum nitride insulator, thermal conduction, thermal resistance
National Category
Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-110987 (URN)
Conference
IEEE SOI Conference
Available from: 2009-12-01 Created: 2009-12-01 Last updated: 2016-04-13
Martin, D., Enlund, J., Kappertz, O. & Jensen, J. (2008). Comparing XPS and ToF-ERDA measurement of high-k dielectric materials. Journal of Physics, Conference Series, 100(1), 012036
Open this publication in new window or tab >>Comparing XPS and ToF-ERDA measurement of high-k dielectric materials
2008 (English)In: Journal of Physics, Conference Series, ISSN 1742-6588, E-ISSN 1742-6596, Vol. 100, no 1, p. 012036-Article in journal (Refereed) Published
National Category
Engineering and Technology Subatomic Physics
Research subject
Ion Physics
Identifiers
urn:nbn:se:uu:diva-111106 (URN)10.1088/1742-6596/100/1/012036 (DOI)000275655200036 ()
Available from: 2009-12-03 Created: 2009-12-03 Last updated: 2018-12-10Bibliographically approved
Jensen, J., Kubart, T., Martin, D., Surpi, A., Blom, T., Topalian, Z., . . . Sanz, R. (2008). Damage formation in TiO2 by heavy ions: consequences for micro- and nano-struring. In: 7th International Symposium on Swift Heavy Ions in Matter (SHIM2008): . Paper presented at 7th International Symposium on Swift Heavy Ions in Matter (SHIM2008). Lyon, France
Open this publication in new window or tab >>Damage formation in TiO2 by heavy ions: consequences for micro- and nano-struring
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2008 (English)In: 7th International Symposium on Swift Heavy Ions in Matter (SHIM2008), Lyon, France, 2008Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
Lyon, France: , 2008
National Category
Subatomic Physics Engineering and Technology
Research subject
Ion Physics
Identifiers
urn:nbn:se:uu:diva-111109 (URN)
Conference
7th International Symposium on Swift Heavy Ions in Matter (SHIM2008)
Available from: 2009-12-03 Created: 2009-12-03 Last updated: 2018-06-26Bibliographically approved
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