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Edoff, Marika
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Publications (10 of 141) Show all publications
Keller, J., Chalvet, F., Joel, J., Aijaz, A., Kubart, T., Riekehr, L., . . . Törndahl, T. (2018). Effect of KF absorber treatment on the functionality of different transparent conductive oxide layers in CIGSe solar cells. Progress in Photovoltaics, 26(1), 13-23.
Open this publication in new window or tab >>Effect of KF absorber treatment on the functionality of different transparent conductive oxide layers in CIGSe solar cells
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2018 (English)In: Progress in Photovoltaics, ISSN 1062-7995, E-ISSN 1099-159X, Vol. 26, no 1, 13-23 p.Article in journal (Refereed) Published
Abstract [en]

This contribution studies the impact of the KF-induced Cu(In,Ga)Se2 (CIGSe) absorber modification on the suitability of different transparent conductive oxide (TCO) layers in solar cells. The TCO material was varied between ZnO:Al (AZO), ZnO:B (BZO), and In2O3:H (IOH). It is shown that the thermal stress needed for optimized TCO properties can establish a transport barrier for charge carriers, which results in severe losses in fill factor (FF) for temperatures >150°C. The FF losses are accompanied by a reduction in open circuit voltage (Voc) that might originate from a decreased apparent doping density (Nd,app) after annealing. Thermally activated redistributions of K and Na in the vicinity of the CdS/(Cu,K)-In-Se interface are suggested to be the reason for the observed degradation in solar cell performance. The highest efficiency was measured for a solar cell where the absorber surface modification was removed and a BZO TCO layer was deposited at a temperature of 165°C. The presented results highlight the importance of well-designed TCO and buffer layer processes for CIGSe solar cells when a KF post deposition treatment (KF-PDT) was applied.

National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:uu:diva-332827 (URN)10.1002/pip.2925 (DOI)000418097200002 ()
Funder
Swedish Energy Agency, 2012-004591
Available from: 2017-11-02 Created: 2017-11-02 Last updated: 2018-01-17Bibliographically approved
Szaniawski, P., Olsson, J., Frisk, C., Fjällström, V., Ledinek, D., Larsson, F., . . . Edoff, M. (2017). A Systematic Study of Light-On-Bias Behavior in Cu(In,Ga)Se2 Solar Cells With Varying Absorber Compositions. IEEE Journal of Photovoltaics, 7(3), 882-891.
Open this publication in new window or tab >>A Systematic Study of Light-On-Bias Behavior in Cu(In,Ga)Se2 Solar Cells With Varying Absorber Compositions
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2017 (English)In: IEEE Journal of Photovoltaics, ISSN 2156-3381, E-ISSN 2156-3403, Vol. 7, no 3, 882-891 p.Article in journal (Refereed) Published
Abstract [en]

Light-on-bias effects were investigated in multiple Cu(In, Ga)Se2 solar cells with varying absorber layer compositions. A strong link between deformations caused by red-on-bias treatments in current-voltage (IV ) and capacitance-voltage (CV) characteristics was demonstrated. Similarly to red-on-bias, blue-on-bias leads to a local increase in static negative charge, but in samples with CdS buffers this increase is shifted away from the interface and has no impact on device performance. IV characteristics of samples with Cd-free buffers are not affected by any light-on-bias treatments, suggesting that CdS plays a vital role in the decreased performance after red-on-bias. A statistical approach was used to search for compositional trends in red-on-bias behavior. Deformation factors were defined for IV and CV characteristics before and after the treatment. While there is a strong relationship between the deformations observed in both types of measurements, the degree to which red-on-bias affects IV and CV curves can vary dramatically. These variations cannot be attributed to changes in composition, since no clear compositional trends were found. Rather, other factors related to sample manufacturing and to the buffer layer seem to have major impact on red-on-bias behavior.

Keyword
Capacitance;Charge measurement;Current measurement;Light emitting diodes;Lighting;Photovoltaic cells;Temperature measurement;Capacitance-voltage characteristics;current-voltage characteristics;degradation;deposition and characterization of thin film PV absorbers;photovoltaic cells;photovoltaic effects;thin film PV device properties and modeling
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:uu:diva-319426 (URN)10.1109/JPHOTOV.2017.2655148 (DOI)000399992000023 ()
Available from: 2017-04-04 Created: 2017-04-04 Last updated: 2017-05-30Bibliographically approved
Szaniawski, P., Zabierowski, P., Olsson, J., Zimmermann, U. & Edoff, M. (2017). Advancing the understanding of reverse breakdown in Cu(In,Ga)Se2 solar cells. IEEE Journal of Photovoltaics, 7(4), 1136-1142.
Open this publication in new window or tab >>Advancing the understanding of reverse breakdown in Cu(In,Ga)Se2 solar cells
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2017 (English)In: IEEE Journal of Photovoltaics, ISSN 2156-3381, E-ISSN 2156-3403, Vol. 7, no 4, 1136-1142 p.Article in journal (Refereed) Published
Abstract [en]

Reverse breakdown is investigated in multiple Cu(In,Ga)Se-2 solar cells with varying buffer layer thicknesses. A method to extract transition voltage, which marks the change of conduction mechanism that leads to electrical breakdown, is described as an alternative to the often less-meaningful breakdown voltage. Transition voltages for samples with CdS and ZnxSn1-xOy buffers are extracted from breakdown measurements performed in darkness and under illumination. The electric field is calculated for ZTO-based samples measured in darkness, and its implications for the energy band structure are examined. Fowler-Nordheim tunneling and Poole-Frenkel conduction are considered as candidates for the main breakdown mechanism in darkness. A model combining the two conduction mechanisms is proposed, and fits for experimental data are presented and discussed. Involvement of defects is debated, and defect-andbreakdown- related phenomena are showcased.

National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:uu:diva-319442 (URN)10.1109/JPHOTOV.2017.2699860 (DOI)000404258900027 ()
Available from: 2017-04-04 Created: 2017-04-04 Last updated: 2017-09-12Bibliographically approved
Zhang, J., Hultqvist, A., Zhang, T., Jiang, L., Ruan, C., Yang, L., . . . Johansson, E. (2017). Al2 O3 Underlayer Prepared by Atomic Layer Deposition for Efficient Perovskite Solar Cells.. ChemSusChem, 10(19), 3810-3817.
Open this publication in new window or tab >>Al2 O3 Underlayer Prepared by Atomic Layer Deposition for Efficient Perovskite Solar Cells.
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2017 (English)In: ChemSusChem, ISSN 1864-5631, E-ISSN 1864-564X, Vol. 10, no 19, 3810-3817 p.Article in journal (Refereed) Published
Abstract [en]

Perovskite solar cells, as an emergent technology for solar energy conversion, have attracted much attention in the solar cell community by demonstrating impressive enhancement in power conversion efficiencies. However, the high temperature and manually processed TiO2 underlayer prepared by spray pyrolysis significantly limit the large-scale application and device reproducibility of perovskite solar cells. In this study, lowtemperature atomic layer deposition (ALD) is used to prepare a compact Al2 O3 underlayer for perovskite solar cells. The thickness of the Al2 O3 layer can be controlled well by adjusting the deposition cycles during the ALD process. An optimal Al2 O3 layer effectively blocks electron recombination at the perovskite/fluorine-doped tin oxide interface and sufficiently transports electrons through tunneling. Perovskite solar cells fabricated with an Al2 O3 layer demonstrated a highest efficiency of 16.2 % for the sample with 50 ALD cycles (ca. 5 nm), which is a significant improvement over underlayer-free PSCs, which have a maximum efficiency of 11.0 %. Detailed characterization confirms that the thickness of the Al2 O3 underlayer significantly influences the charge transfer resistance and electron recombination processes in the devices. Furthermore, this work shows the feasibility of using a high band-gap semiconductor such as Al2 O3 as the underlayer in perovskite solar cells and opens up pathways to use ALD Al2 O3 underlayers for flexible solar cells.

Keyword
atomic layer deposition, electron transport, perovskites, semiconductors, solar cells
National Category
Nano Technology
Research subject
Engineering Science with specialization in Nanotechnology and Functional Materials
Identifiers
urn:nbn:se:uu:diva-336200 (URN)10.1002/cssc.201701160 (DOI)000412732900017 ()28857493 (PubMedID)
Funder
Swedish Energy AgencyÅForsk (Ångpanneföreningen's Foundation for Research and Development)Swedish Research CouncilSwedish Research Council FormasKnut and Alice Wallenberg Foundation
Available from: 2017-12-12 Created: 2017-12-12 Last updated: 2018-01-10Bibliographically approved
Bilousov, O. V., Ren, Y., Törndahl, T., Donzel-Gargand, O., Ericson, T., Platzer Björkman, C., . . . Hägglund, C. (2017). ALD of phase controlled tin monosulfide thin films. In: : . Paper presented at Joint EuroCVD 21 – Baltic ALD 15. .
Open this publication in new window or tab >>ALD of phase controlled tin monosulfide thin films
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2017 (English)Conference paper, Poster (with or without abstract) (Refereed)
Abstract [en]

Tin monosulfide (SnS) is a promising semiconductor material for low-cost conversion of solar energy, playing the role of absorber layer in photovoltaic devices. SnS is, due to its high optical damping, also an excellent semiconductor candidate for the realization of ultrathin (nanoscale thickness) plasmonic solar cells [1].

Here, we present an important step to further control and understand SnS film properties produced using low temperature ALD with Sn(acac)2 and H2S as precursors. We show that the SnS film properties vary over a rather wide range depending on substrate temperature and reaction conditions, and that this is connected to the growth of cubic (π-SnS) and orthorhombic SnS phases. The optical properties of the two polymorphs differ significantly, as demonstrated by spectroscopic ellipsometry [2].

1. C. Hägglund, G. Zeltzer, R. Ruiz, A. Wangperawong, K. E. Roelofs, S. F. Bent, ACS Photonics 3 (3) (2016) 456–463.

2. O. V. Bilousov, Y. Ren, T. Törndahl, O. Donzel-Gargand , T. Ericson, C. Platzer-Björkman, M. Edoff, and C. Hägglund, ACS Chemistry of Materials  29 (7) (2017) 2969–2978.

Keyword
atomic layer deposition, thin films, solar cells, semiconductors
National Category
Materials Engineering
Identifiers
urn:nbn:se:uu:diva-335501 (URN)
Conference
Joint EuroCVD 21 – Baltic ALD 15
Projects
Ultrathin nanocomposite absorbers and heterojunctions for solar cells
Funder
Swedish Research Council, 621-2014-5599
Available from: 2017-12-06 Created: 2017-12-06 Last updated: 2017-12-29Bibliographically approved
Bilousov, O. V., Ren, Y., Törndahl, T., Donzel-Gargand, O., Ericson, T., Platzer-Björkman, C., . . . Hägglund, C. (2017). Atomic Layer Deposition of Cubic and Orthorhombic Phase Tin Monosulfide. Chemistry of Materials, 29(7), 2969-2978.
Open this publication in new window or tab >>Atomic Layer Deposition of Cubic and Orthorhombic Phase Tin Monosulfide
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2017 (English)In: Chemistry of Materials, ISSN 0897-4756, E-ISSN 1520-5002, Vol. 29, no 7, 2969-2978 p.Article in journal (Refereed) Published
Abstract [en]

Tin monosulfide (SnS) is a promising light-absorbing material with weak environmental constraints for application in thin film solar cells. In this paper, we present low-temperature atomic layer deposition (ALD) of high-purity SnS of both cubic and orthorhombic phases. Using tin(II) 2,4-pentanedionate [Sn(acac)(2)] and hydrogen sulfide (H2S) as precursors, controlled growth of the two polymorphs is achieved. Quartz crystal microbalance measurements are used to establish saturated conditions and show that the SnS ALD is self-limiting over temperatures from at least 80 to 160 degrees C. In this temperature window, a stable mass gain of 19 ng cm(-2) cycle(-1) is observed. The SnS thin film crystal structure and morphology undergo significant changes depending on the conditions. High-resolution transmission electron microscopy and X-ray diffraction demonstrate that fully saturated growth requires a large H2S dose and results in the cubic phase. Smaller H2S doses and higher temperatures favor the orthorhombic phase. The optical properties of the two polymorphs differ significantly, as demonstrated by spectroscopic ellipsometry. The orthorhombic phase displays a wide (0.3-0.4 eV) Urbach tail in the near-infrared region, ascribed to its nanoscale structural disorder and/or to sulfur vacancy-induced gap states. In contrast, the cubic phase is smooth and void-free and shows a well-defined, direct forbidden-type bandgap of 1.64 eV.

Place, publisher, year, edition, pages
AMER CHEMICAL SOC, 2017
National Category
Chemical Sciences Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-321836 (URN)10.1021/acs.chemmater.6b05323 (DOI)000399264100042 ()
Funder
Swedish Research Council, 621-2014-5599
Available from: 2017-05-15 Created: 2017-05-15 Last updated: 2017-05-15Bibliographically approved
Salome, P. M. P., Ribeiro-Andrade, R., Teixeira, J. P., Keller, J., Törndahl, T., Nicoara, N., . . . Sadewasser, S. (2017). Cd and Cu Interdiffusion in Cu(In, Ga) Se-2/CdS Hetero-Interfaces. IEEE Journal of Photovoltaics, 7(3), 858-863.
Open this publication in new window or tab >>Cd and Cu Interdiffusion in Cu(In, Ga) Se-2/CdS Hetero-Interfaces
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2017 (English)In: IEEE Journal of Photovoltaics, ISSN 2156-3381, E-ISSN 2156-3403, Vol. 7, no 3, 858-863 p.Article in journal (Refereed) Published
Abstract [en]

We report a detailed characterization of an industrylike prepared Cu(In, Ga) Se-2 (CIGS)/CdS heterojunction by scanning transmission electron microscopy and photoluminescence (PL). Energy dispersive X-ray spectroscopy shows the presence of several regions in the CIGS layer that are Cu deprived and Cd enriched, suggesting the segregation of Cd-Se. Concurrently, the CdS layer shows Cd-deprived regions with the presence of Cu, suggesting a segregation of Cu-S. The two types of segregations are always found together, which, to the best of our knowledge, is observed for the first time. The results indicate that there is a diffusion process that replaces Cu with Cd in the CIGS layer and Cd with Cu in the CdS layer. Using a combinatorial approach, we identified that this effect is independent of focused-ion beam sample preparation and of the transmission electron microscopy grid. Furthermore, PL measurements before and after an HCl etch indicate a lower degree of defects in the postetch sample, compatible with the segregates removal. We hypothesize that Cu2-x Se nanodomains react during the chemical bath process to form these segregates since the chemical reaction that dominates this process is thermodynamically favorable. These results provide important additional information about the formation of the CIGS/CdS interface.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2017
Keyword
CdS, Cu(In, Ga) Se-2 (CIGS), diffusion, solar cells, thin films, transmission electron microscopy (TEM)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:uu:diva-322689 (URN)10.1109/JPHOTOV.2017.2666550 (DOI)000399992000019 ()
Available from: 2017-05-29 Created: 2017-05-29 Last updated: 2017-05-29Bibliographically approved
Salome, P. M., Keller, J., Törndahl, T., Teixeira, J. P., Nicoara, N., Andrade, R.-R. -., . . . Sadewasser, S. (2017). CdS and Zn1-xSnxOy buffer layers for CIGS solar cells. Solar Energy Materials and Solar Cells, 159, 272-281.
Open this publication in new window or tab >>CdS and Zn1-xSnxOy buffer layers for CIGS solar cells
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2017 (English)In: Solar Energy Materials and Solar Cells, ISSN 0927-0248, E-ISSN 1879-3398, Vol. 159, 272-281 p.Article in journal (Refereed) Published
Abstract [en]

Thin film solar cells based on Cu(In,Ga)Se-2 (CIGS), where just the buffer layer is changed, were fabricated and studied. The effects of two different buffer layers, CdS and Zn1-xSnxOy (ZnSnO), are compared using several characterization techniques. We compared both devices and observe that the ZnSnO-based solar cells have similar values of power conversion efficiency as compared to the cells with CdS buffer layers. The ZnSnO-based devices have higher values in the short-circuit current (6) that compensate for lower values in fill factor (FF) and open circuit voltage (V-oc) than CdS based devices. Kelvin probe force microscopy (KPFM) results indicate that CdS provides junctions with slightly higher surface photovoltage (SPV) than ZnSnO, thus explaining the lower Voc potential for the ZnSnO sample. The TEM analysis shows a poly-crystalline ZnSnO layer and we have not detected any strong evidence of diffusion of Zn or Sn into the CIGS. From the photoluminescence measurements, we concluded that both samples are being affected by fluctuating potentials, although this effect is higher for the CdS sample.

Keyword
Thin film solar cells, Cu(In, Ga)Se-2 (CIGS), Buffer layers, CdS, Zn1-xSnxOy
National Category
Condensed Matter Physics Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-310732 (URN)10.1016/j.solmat.2016.09.023 (DOI)000388053600032 ()
Funder
EU, European Research Council, 327367Swedish Energy Agency, 2012-004591VINNOVA, 2013-02199StandUp
Available from: 2016-12-20 Created: 2016-12-19 Last updated: 2017-11-29Bibliographically approved
Donzel-Gargand, O., Thersleff, T., Keller, J., Törndahl, T., Larsson, F., Wallin, E., . . . Edoff, M. (2017). Cu-depleted patches induced by presence of K during growth of CIGS absorbers. In: : . Paper presented at 34th European PV Solar Energy Conference and Exhibition (EUPVSEC) 2017. .
Open this publication in new window or tab >>Cu-depleted patches induced by presence of K during growth of CIGS absorbers
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2017 (English)Conference paper, Oral presentation with published abstract (Refereed)
Abstract [en]

The conversion efficiency of the CIGS thin film solar cells has rapidly increased since introduction of the heavier alkali-doping (K, Rb, Cs). While the exclusive introduction of Na in the CIGS films has led to efficiencies up to 20,4% 1, the latest K, Rb or Cs post deposition treatments (PDT) have increased the efficiency to 22,6% 2. The exact role of this heavy-alkali PDT is still under discussion but three explanations have been discussed in the literature. First, that the heavy alkali PDT facilitates CdCu substitution, that results in an enhanced absorber type inversion, moving the p-n junction further into the CIGS bulk 3. Second, that the main effect from heavy alkali PDT is due to the formation of a K-In-Se2 layer, that passivates defects at the CIGS surface, reducing interface recombination 4. And third, that the heavy alkali PDT induces a Cu depletion at the surface of the CIGS which, by increasing the local Fermi level, increases the band bending; thus creating a higher potential barrier for holes to recombine 5.

National Category
Energy Systems Other Materials Engineering
Identifiers
urn:nbn:se:uu:diva-335110 (URN)
Conference
34th European PV Solar Energy Conference and Exhibition (EUPVSEC) 2017
Available from: 2017-11-30 Created: 2017-11-30 Last updated: 2017-12-29Bibliographically approved
Larsson, F., Keller, J., Edoff, M. & Törndahl, T. (2017). Evaluation of different intrinsic ZnO and transparent conducting oxide layer combinations in Cu(In,Ga)Se2 solar cells. Paper presented at Symposium V on Thin Film Chalcogenide Photovoltaic Materials held at the 13th E-MRS Spring Meeting, MAY 02-06, 2016, Lille, FRANCE. Thin Solid Films, 633, 235-238.
Open this publication in new window or tab >>Evaluation of different intrinsic ZnO and transparent conducting oxide layer combinations in Cu(In,Ga)Se2 solar cells
2017 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 633, 235-238 p.Article in journal (Refereed) Published
Abstract [en]

We studied the interaction of four different window layer combinations in Cu(In,Ga)Se-2 solar cells. Intrinsic ZnO (i-ZnO) layers were grown on CdS by either chemical vapor deposition (CVD) or magnetron sputtering. These were combined with sputtered ZnO:Al or In2O3:H grown by atomic layer deposition as transparent conducting oxides (TCO). It was found that the thickness of the CVD i-ZnO layer affects the open circuit voltage (V-oc) significantly when using In2O3:H as TCO. The V-oc dropped by roughly 30 mV when the i-ZnO thickness was increased from 20 to 160 nm. This detrimental effect on V-oc was not as prominent when a ZnO:Al TCO was used, where the corresponding decrease was in the range of 5 to 10 my. In addition, the V-oc drop for the CVD i-ZnO/In2O3:H structure was not observed when using the sputtered i-ZnO layer. Furthermore, large fill factor variations were observed when using the In2O3:H TCO without an i-ZnO layer underneath, where already a thin (20 nm) CVD i-ZnO layer mitigated this effect. Device simulations were applied to explain the experimentally observed Voc trends.

Keyword
Copper indium gallium selenide, Transparent conducting oxide, Atomic layer deposition, Zinc oxide, Indium oxide
National Category
Physical Sciences Materials Engineering
Identifiers
urn:nbn:se:uu:diva-330020 (URN)10.1016/j.tsf.2016.09.015 (DOI)000404802300045 ()
Conference
Symposium V on Thin Film Chalcogenide Photovoltaic Materials held at the 13th E-MRS Spring Meeting, MAY 02-06, 2016, Lille, FRANCE
Funder
Swedish Energy Agency, 2012-004591
Note

Evaluation of different intrinsic ZnO and transparent conducting oxide layer combinations in Cu(In,Ga)Se-2 solar cells

Available from: 2017-10-10 Created: 2017-10-10 Last updated: 2017-10-10Bibliographically approved
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