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Sjöblom, Gustaf
Publications (10 of 11) Show all publications
Abermann, S., Efavi, J. K., Sjöblom, G., Lemme, M. C., Olsson, J. & Bertagnolli, E. (2007). Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-k dielectrics. Microelectronics and reliability, 47(4-5), 536-539
Open this publication in new window or tab >>Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-k dielectrics
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2007 (English)In: Microelectronics and reliability, ISSN 0026-2714, E-ISSN 1872-941X, Vol. 47, no 4-5, p. 536-539Article in journal (Refereed) Published
Abstract [en]

In this work we compare the impacts of nickel (Ni), titanium-nitride (TiN), molybdenum (Mo), and aluminium (Al), gates on MOS capacitors incorporating HfO2- or ZrO2-dielectrics. The primary focus lies on interface trapping, oxide charging, and thermodynamical stability during different annealing steps of these gate stacks. Whereas Ni, Mo, and especially TiN are investigated as most promising candidates for future CMOS devices, Al acted as reference gate material to benchmark the parameters. Post-metallization annealing of both, TiN- and Mo-stacks, resulted in very promising electrical characteristics. However, gate stacks annealed at temperatures of 800 °C or 950 °C show thermodynamic instability and related undesirable high leakage currents.

National Category
Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-11288 (URN)10.1016/j.microrel.2007.01.002 (DOI)000248663300014 ()
Available from: 2007-08-24 Created: 2007-08-24 Last updated: 2017-12-11Bibliographically approved
Olsson, J., Vallin, Ö., Sjöblom, G., Norström, H., Smith, U., Vestling, L. & Berg, S. (2007). Novel Silicon-on-SiC Substrate with Superior Thermal and RF Performance. In: Proceedings IEEE SOI conference: . Paper presented at IEEE SOI conference (pp. 115-116).
Open this publication in new window or tab >>Novel Silicon-on-SiC Substrate with Superior Thermal and RF Performance
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2007 (English)In: Proceedings IEEE SOI conference, 2007, p. 115-116Conference paper, Published paper (Refereed)
National Category
Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-12599 (URN)
Conference
IEEE SOI conference
Available from: 2008-01-07 Created: 2008-01-07 Last updated: 2016-04-11Bibliographically approved
Abermann, S., Efavi, J. K., Sjöblom, G., Lemme, M. C., Olsson, J. & Bertagnolli, E. (2007). Processing and evaluation of metal gate/high-k/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-k dielectric. Microelectronic Engineering, 84(5-8), 1635-1638
Open this publication in new window or tab >>Processing and evaluation of metal gate/high-k/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-k dielectric
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2007 (English)In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 84, no 5-8, p. 1635-1638Article in journal (Refereed) Published
Abstract [en]

We evaluate various metal gate/high-k/Si capacitors by their resulting electrical characteristics. Therefore, we process MOS gate stacks incorporating aluminium (Al), nickel (Ni), titanium-nitride (TiN), and molybdenum (Mo) as the gate material, and metal organic chemical vapour deposited (MOCVD) ZrO2 and HfO2 as the gate dielectric, respectively. The influence of the processing sequence - especially of the thermal annealing treatment - on the electrical characteristics of the various gate stacks is being investigated. Whereas post metallization annealing in forming gas atmosphere improves capacitance-voltage behaviour (due to reduced interface-, and oxide charge density), current-voltage characteristics degrade due to a higher leakage current after thermal treatment at higher temperatures. The Flatband-voltage values for the TiN-, Mo-, and Ni-capacitors indicate mid-gap pinning of the metal gates, however, Ni seems to be thermally unstable on ZrO2, at least within the process scheme we applied.

Keywords
metal gate, high-kappa, ZrO2, HfO2, MOCVD, processing
National Category
Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-11289 (URN)10.1016/j.mee.2007.01.176 (DOI)000247182500223 ()
Available from: 2007-08-24 Created: 2007-08-24 Last updated: 2017-12-11
Abermann, S., Sjöblom, G., Efavi, J., Lemme, M., Olsson, J. & Bertagnolli, E. (2006). Comparative Study On The Impact Of TiN and Mo Metal Gates ON MOCVD-Grown HfO2 and ZrO2 High-k Dielectrics For CMOS Technology. In: Wolfgang Jantsch, Friedrich Schäffler (Ed.), Proceedings of 28th International Conference on the Physics of Semiconductors (ICPS): . Paper presented at The 28th International Conference on the Physics of Semiconductors (ICPS), 2006, Vienna.
Open this publication in new window or tab >>Comparative Study On The Impact Of TiN and Mo Metal Gates ON MOCVD-Grown HfO2 and ZrO2 High-k Dielectrics For CMOS Technology
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2006 (English)In: Proceedings of 28th International Conference on the Physics of Semiconductors (ICPS) / [ed] Wolfgang Jantsch, Friedrich Schäffler, 2006Conference paper, Published paper (Refereed)
National Category
Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-94805 (URN)
Conference
The 28th International Conference on the Physics of Semiconductors (ICPS), 2006, Vienna
Available from: 2006-09-08 Created: 2006-09-08 Last updated: 2016-06-22
Abermann, S., Efavi, J., Sjöblom, G., Lemm, M., Olsson, J. & Bertagnolli, E. (2006). Impact of Al-, Ni-, TiN-, and Mo metal gates on MOCVD-grown HfO2 and ZrO2 high-K dielectrics. In: : . Paper presented at WoDiM 2006, 14th Workshop on Dielectrics in Microelectronics, Santa Tecla, Italy June.
Open this publication in new window or tab >>Impact of Al-, Ni-, TiN-, and Mo metal gates on MOCVD-grown HfO2 and ZrO2 high-K dielectrics
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2006 (English)Conference paper, Published paper (Refereed)
National Category
Engineering and Technology
Identifiers
urn:nbn:se:uu:diva-23537 (URN)
Conference
WoDiM 2006, 14th Workshop on Dielectrics in Microelectronics, Santa Tecla, Italy June
Available from: 2007-01-30 Created: 2007-01-30 Last updated: 2016-06-22
Abermann, S., Efavi, J., Sjöblom, G., Lemme, M., Olsson, J. & Bertagnolli, E. (2006). Processing and evaluation of metal gate/high-k/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-k dielectric. In: Presented at Int. Conf. on Micro- and Nano-Engineering: . Paper presented at Int. Conf. on Micro- and Nano-Engineering, Barcelona, Spain.
Open this publication in new window or tab >>Processing and evaluation of metal gate/high-k/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-k dielectric
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2006 (English)In: Presented at Int. Conf. on Micro- and Nano-Engineering, 2006Conference paper, Oral presentation with published abstract (Other academic)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:uu:diva-211204 (URN)
Conference
Int. Conf. on Micro- and Nano-Engineering, Barcelona, Spain
Available from: 2013-11-21 Created: 2013-11-21 Last updated: 2018-06-04
Sjöblom, G., Pantisano, L., Schram, T., Olsson, J., Afanasév, V. & Heyns, M. (2005). Metal gate work function extraction using Fowler-Nordheim tunneling techniques. In: INFOS 2005.
Open this publication in new window or tab >>Metal gate work function extraction using Fowler-Nordheim tunneling techniques
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2005 (English)In: INFOS 2005, 2005Conference paper, Published paper (Other scientific)
Identifiers
urn:nbn:se:uu:diva-75907 (URN)
Available from: 2006-03-10 Created: 2006-03-10
Lujan, G. S., Schram, T., Sjöblom, G., Witters, T., Kubicek, S., De Gendt, S. & De Meyer, K. (2004). Interface passivation mechanisms in metal gated oxide capacitors. In: Proc of the 34th ESSDERC.
Open this publication in new window or tab >>Interface passivation mechanisms in metal gated oxide capacitors
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2004 (English)In: Proc of the 34th ESSDERC, 2004Conference paper, Published paper (Other scientific)
Identifiers
urn:nbn:se:uu:diva-68108 (URN)
Available from: 2005-05-04 Created: 2005-05-04
Wu, D., Persson, S., Lindgren, A.-C., Sjöblom, G., Hellström, P.-E., Olsson, J., . . . Tuominen, M. (2003). ALD metal-gate/high-k gate stack for Si and Si0.7Ge0.3 surface-channel pMOSFETs. In: Proceedings of 33th ESSDERC2003 (pp. 263-266).
Open this publication in new window or tab >>ALD metal-gate/high-k gate stack for Si and Si0.7Ge0.3 surface-channel pMOSFETs
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2003 (English)In: Proceedings of 33th ESSDERC2003, 2003, p. 263-266Conference paper, Published paper (Refereed)
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:uu:diva-46459 (URN)
Available from: 2007-02-23 Created: 2007-02-23
Sjöblom, G., Blom, H.-O. & Olsson, J. (2003). Flatband Voltage Adjustment USing Reactively Sputtered TiN Metal Gates. In: Proc. of the AVS 4th International Conference on Microelectronics & Interfaces, Santa Clara, USA (pp. 215-217).
Open this publication in new window or tab >>Flatband Voltage Adjustment USing Reactively Sputtered TiN Metal Gates
2003 (English)In: Proc. of the AVS 4th International Conference on Microelectronics & Interfaces, Santa Clara, USA, 2003, p. 215-217Conference paper, Published paper (Refereed)
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:uu:diva-46457 (URN)
Available from: 2007-02-23 Created: 2007-02-23
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