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Castleton, Christopher
Publications (7 of 7) Show all publications
Castleton, C., Nokbin, S. & Hermansson, K. (2008). Charge transfer and adhesion in Rh/MgO(001). In: Johansson LSO; Andersen JN; Gothelid M; Helmersson U; Montelius L; Rubel M; Setina J; Wernersson LE (Ed.), Proceedings of the 17th international vacuum congress/13th international conference on surface science/international conference on nanoscience and technology. Paper presented at 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology Stockholm, SWEDEN, JUL 02-06, 2007 (pp. 082027). , 100(8)
Open this publication in new window or tab >>Charge transfer and adhesion in Rh/MgO(001)
2008 (English)In: Proceedings of the 17th international vacuum congress/13th international conference on surface science/international conference on nanoscience and technology / [ed] Johansson LSO; Andersen JN; Gothelid M; Helmersson U; Montelius L; Rubel M; Setina J; Wernersson LE, 2008, Vol. 100, no 8, p. 082027-Conference paper, Published paper (Refereed)
Abstract [en]

Ab initio density functional calculations are reported for Rh adlayers on MgO(001) at coverages of 1, 1/2 and 1/8 monolayers. It is shown that charge is transferred from oxide surface to the Rh adatoms. The transfer ranges from 0.06 e to 0.27 e, depending upon adsorption site and coverage. In comparison, transfers of 0.08 e from adatom to surface and 0.32 e surface to adatom are found for monolayer coverages of Mg and O, respectively. With the Rh adatoms, significant charge polarization of both Rh and the surface are also seen, but it is never-the-less found that the adhesion energy is linearly related to the charge transfer, with the most stable adsorption site at any particular coverage being the one at which the charge transfer is a maximum.

National Category
Chemical Sciences
Research subject
Inorganic Chemistry
Identifiers
urn:nbn:se:uu:diva-108377 (URN)10.1088/1742-6596/100/8/082027 (DOI)000275655200305 ()
Conference
17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology Stockholm, SWEDEN, JUL 02-06, 2007
Available from: 2009-09-17 Created: 2009-09-17 Last updated: 2011-03-25Bibliographically approved
Höglund, A., Castleton, C. & Mirbt, S. (2008). Diffusion mechanism of Zn in InP and GaP from first principles. Physical Review B. Condensed Matter and Materials Physics, 77(11), 113201
Open this publication in new window or tab >>Diffusion mechanism of Zn in InP and GaP from first principles
2008 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 77, no 11, p. 113201-Article in journal (Refereed) Published
Abstract [en]

The diffusion mechanism of Zn in GaP and InP has been investigated using first-principles computational methods. It is found that the kickout mechanism is the favored diffusion process under all doping conditions for InP, and under all except n-type conditions for GaP. In n-type GaP the dissociative mechanism is probable. In both p-type GaP and InP, the diffusing species is found to be Zn. The activation energy for the kickout process is 2.49 eV in GaP and 1.60 eV in InP, and therefore unintentional diffusion of Zn should be a larger concern in InP than in GaP. The dependence of the activation energy both on the doping conditions of the material and on the stoichiometry is explained, and found to be in qualitative agreement with the experimentally observed dependencies. The calculated activation energies agree reasonably with experimental data, assuming that the region from which Zn diffuses is p type. Explanations are also found as to why Zn tends to accumulate at pn junctions in InP and to why a relatively low fraction of Zn is found on substitutional sites in InP.

National Category
Inorganic Chemistry
Identifiers
urn:nbn:se:uu:diva-16521 (URN)10.1103/PhysRevB.77.113201 (DOI)000254542800010 ()
Available from: 2008-05-28 Created: 2008-05-28 Last updated: 2017-12-08Bibliographically approved
Castleton, C., Nokbin, S. & Hermansson, K. (2007). Correlations between magnetic properties and bond formation in Rh–MgO(0 0 1). Surface Science, 601(5), 1218-1230
Open this publication in new window or tab >>Correlations between magnetic properties and bond formation in Rh–MgO(0 0 1)
2007 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 601, no 5, p. 1218-1230Article in journal (Refereed) Published
Abstract [en]

We present the results of first principles calculations for the magnetism of Rh adlayers on MgO(0 0 1), at three different adsorption sites and three different coverages, corresponding to 1, 1/2 and 1/8 monolayers. Finite magnetization is found in all cases except that of one Rh monolayer above the oxygen site, which is also the most stable. We examine how the magnetization changes as a function of the Rh–surface distance and relate this to changes in the real-space charge density and in the density of states (DOS) as the Rh adlayer interacts with the surface. We find that increasing either the Rh–Rh interaction strength or the Rh–surface interaction strength leads to reduced magnetization, while increasing the former drives a crossover from localized (atomic) to itinerant magnetism. Neither the magnetic transition itself, nor the localized-to-itinerant magnetism crossover, is found to be directly related to the formation of Rh–surface bonds. From a practical point of view, we predict that magnetism in the Rh–MgO(0 0 1) system is most likely to be found experimentally at reduced coverages and at low temperatures.

Keywords
Density functional calculations, Electron density, Excitation spectra calculations, Adhesion, Magnetic phenomena (cyclotron resonance, phase transitions, etc.), Rhodium, Magnesium oxides, Adatoms, Magnetic films
National Category
Chemical Sciences
Identifiers
urn:nbn:se:uu:diva-26613 (URN)10.1016/j.susc.2006.12.061 (DOI)000245065100008 ()
Available from: 2007-02-26 Created: 2007-02-26 Last updated: 2017-12-07Bibliographically approved
Castleton, C., Kullgren, J. & Hermansson, K. (2007). Tuning LDA+U for electron localization and structure at oxygen vacancies in ceria. Journal of Chemical Physics, 127(24), 244704-244704-11
Open this publication in new window or tab >>Tuning LDA+U for electron localization and structure at oxygen vacancies in ceria
2007 (English)In: Journal of Chemical Physics, ISSN 0021-9606, E-ISSN 1089-7690, Vol. 127, no 24, p. 244704-244704-11Article in journal (Refereed) Published
Abstract [en]

We examine the real space structure and the electronic structure (particularly Ce4f electron localization) of oxygen vacancies in CeO2 (ceria) as a function of U in density functional theory studies with the rotationally invariant forms of the LDA+U and GGA+U functionals. The four nearest neighbor Ce ions always relax outwards, with those not carrying localized Ce4f charge moving furthest. Several quantification schemes show that the charge starts to become localized at U~3 eV and that the degree of localization reaches a maximum at ~6 eV for LDA+U or at ~5.5 eV for GGA+U. For higher U it decreases rapidly as charge is transferred onto second neighbor O ions and beyond. The localization is never into atomic corelike states; at maximum localization about 80-90% of the Ce4f charge is located on the two nearest neighboring Ce ions. However, if we look at the total atomic charge we find that the two ions only make a net gain of (0.2-0.4)e each, so localization is actually very incomplete, with localization of Ce4f electrons coming at the expense of moving other electrons off the Ce ions. We have also revisited some properties of defect-free ceria and find that with LDA+U the crystal structure is actually best described with U=3-4 eV, while the experimental band structure is obtained with U=7-8 eV. (For GGA+U the lattice parameters worsen for U>0 eV, but the band structure is similar to LDA+U.) The best overall choice is U~6 eV with LDA+U and ~5.5 eV for GGA+U, since the localization is most important, but a consistent choice for both CeO2 and Ce2O3, with and without vacancies, is hard to find.

Keywords
Other nonmetals, Point defects and defect clusters, Density functional theory, local density approximation, gradient and other corrections
National Category
Chemical Sciences
Identifiers
urn:nbn:se:uu:diva-12806 (URN)10.1063/1.2800015 (DOI)000251987800030 ()
Available from: 2008-01-15 Created: 2008-01-15 Last updated: 2017-12-11Bibliographically approved
Castleton, C., Höglund, A. & Mirbt, S. (2006). Managing the supercell approximation for charged defects in semiconductors: Finite-size scaling, charge correction factors, the band-gap problem, and the ab initio dielectric constant. Physical Review B, 73(035215), 11
Open this publication in new window or tab >>Managing the supercell approximation for charged defects in semiconductors: Finite-size scaling, charge correction factors, the band-gap problem, and the ab initio dielectric constant
2006 (English)In: Physical Review B, Vol. 73, no 035215, p. 11-Article in journal (Refereed) Published
Abstract [en]

The errors arising in ab initio density functional theory studies of semiconductor point defects using the supercell approximation are analyzed. It is demonstrated that (a) the leading finite size errors are inverse linear and inverse cubic in the supercell size and (b) finite size scaling over a series of supercells gives reliable isolated charged defect formation energies to around +-0.05 eV. The scaled results are used to test three correction methods. The Makov-Payne method is insufficient, but combined with the scaling parameters yields an ab initio dielectric constant of 11.6+-4.1 for InP. Gamma point corrections for defect level dispersion are completely incorrect, even for shallow levels, but realigning the total potential in real-space between defect and bulk cells actually corrects the electrostatic defect-defect interaction errors as well. Isolated defect energies to +-0.1 eV are then obtained using a 64 atom supercell, though this does not improve for larger cells. Finally, finite size scaling of known dopant levels shows how to treat the band gap problem: in < or = 200 atom supercells with no corrections, continuing to consider levels into the theoretical conductin band (extended gap) comes closest to experiment. However, for larger cells or when supercell approximation errors are removed, a scissors scheme stretching the theoretical band gap onto the experimental one is in fact correct.

Keywords
Semiconductor defects, DFT, theory, InP, supercell approximation errors
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:uu:diva-77612 (URN)
Available from: 2006-03-15 Created: 2006-03-15 Last updated: 2011-01-11
Höglund, A., Castleton, C., Göthelid, M., Johansson, B. & Mirbt, S. (2006). Point defects on the (110) surfaces of InP, InAs, and InSb: A comparison with bulk. Physical Review B. Condensed Matter and Materials Physics, 74(7), 075332
Open this publication in new window or tab >>Point defects on the (110) surfaces of InP, InAs, and InSb: A comparison with bulk
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2006 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 74, no 7, p. 075332-Article in journal (Refereed) Published
Abstract [en]

The basic properties of point defects, such as local geometries, positions of charge-transfer levels, and formation energies, have been calculated using density-functional theory, both in the bulk and on the (110) surface of InP, InAs, and InSb. Based on these results we discuss the electronic properties of bulk and surface defects, defect segregation, and compensation. In comparing the relative stability of the surface and bulk defects, it is found that the native defects generally have higher formation energies in the bulk. From this it can be concluded that at equilibrium there is a considerably larger fraction of defects at the surface and under nonequilibrium conditions defects are expected to segregate to the surface, given sufficient time. In most cases the charge state of a defect changes upon segregation, altering the charge-carrier concentrations. The photothresholds are also calculated for the three semiconductors and are found to be in good agreement with experimental data.

National Category
Physical Sciences
Identifiers
urn:nbn:se:uu:diva-95999 (URN)10.1103/PhysRevB.74.075332 (DOI)000240238800083 ()
Available from: 2007-05-15 Created: 2007-05-15 Last updated: 2017-12-14Bibliographically approved
Höglund, A., Castleton, C. & Mirbt, S. (2005). Relative concentration and structure of native defects in GaP. Physical Review B, 72, 195213
Open this publication in new window or tab >>Relative concentration and structure of native defects in GaP
2005 (English)In: Physical Review B, Vol. 72, p. 195213-Article in journal (Refereed) Published
Abstract [en]

The native defects in the compound semiconductor GaP have been studied using a pseudopotential Density Functional Theory method in order to

determine their relative concentrations and the most stable charge states. The electronic and atomic structures are presented and the defe

ct concentrations are estimated using calculated formation energies. Relaxation effects are taken into account fully and produce negative-U

charge transfer levels for V\sS{P}{} and P\sS{Ga}{}. The concentration of V\sS{Ga}{} is in good agreement with the results of positron ann

ihilation experiments. The charge transfer levels presented compare qualitatively well with experiments where available. The effect of stoi

chiometry on the defect concentrations is also described and is shown to be considerable.

The lowest formation energies are found for P\sS{Ga}{+2} in p-type and V\sS{Ga}{-3} in n-type GaP under P-rich conditions, and for Ga\sS{P}

{-2} in n-type GaP under Ga-rich conditions.

Finally, the finite size errors arising from the use of supercells with periodic boundary conditions are examined.

Keywords
GaP, semiconductor, point defects, vacancy, intrinsic doping
National Category
Condensed Matter Physics Inorganic Chemistry
Identifiers
urn:nbn:se:uu:diva-77485 (URN)doi:10.1103/PhysRevB.72.195213 (DOI)
Available from: 2006-03-15 Created: 2006-03-15 Last updated: 2011-01-11
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