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2016 (English)In: IEEE Journal of Photovoltaics, ISSN 2156-3381, E-ISSN 2156-3403, Vol. 6, no 1, p. 332-336Article in journal (Refereed) Published
Abstract [en]
Previously, an innovative way to reduce rear interface recombination in Cu(In, Ga)(S, Se)(2) (CIGSSe) solar cells has been successfully developed. In this work, this concept is established in Cu-2(Zn, Sn)(S, Se)(4) (CZTSSe) cells to demonstrate its potential for other thin-film technologies. Therefore, ultrathin CZTS cells with an Al2O3 rear surface passivation layer having nanosized point openings are fabricated. The results indicate that introducing such a passivation layer can have a positive impact on open-circuit voltage (V-OC; +17% rel.), short-circuit current (J(SC); +5% rel.), and fill factor (FF; +9% rel.), compared with corresponding unpassivated cells. Hence, a promising efficiency improvement of 32% rel. is obtained for the rear passivated cells.
Keyword
Aluminum oxide, Cu(In, Ga)(S, Se)(2), Cu-2(Zn, Sn)(S, Se)(4), nanosized point contacts, solar cells, surface passivation layer, thin-film
National Category
Environmental Engineering
Identifiers
urn:nbn:se:uu:diva-274909 (URN)10.1109/JPHOTOV.2015.2496864 (DOI)000367251900048 ()
Funder
Swedish Research CouncilSwedish Energy AgencyEU, FP7, Seventh Framework Programme, 300998EU, FP7, Seventh Framework Programme, 327367
2016-01-272016-01-262017-11-30Bibliographically approved