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Publications (4 of 4) Show all publications
Tran, T., Gandhi, H. H., Pastor, D., Aziz, M. J. & Williams, J. (2017). Ion-beam synthesis and thermal stability of highly tin-concentrated germanium – tin alloys. Materials Science in Semiconductor Processing, 62, 192-195
Open this publication in new window or tab >>Ion-beam synthesis and thermal stability of highly tin-concentrated germanium – tin alloys
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2017 (English)In: Materials Science in Semiconductor Processing, ISSN 1369-8001, E-ISSN 1873-4081, Vol. 62, p. 192-195Article in journal (Refereed) Published
Keywords
Germanium-tin alloys, Ion implantation, Semiconductor processing, Direct bandgap group IV alloys
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
urn:nbn:se:uu:diva-351522 (URN)10.1016/j.mssp.2016.10.049 (DOI)
Available from: 2018-05-28 Created: 2018-05-28 Last updated: 2018-05-30Bibliographically approved
Tran, T. T., Pastor, D., Gandhi, H. H., Smillie, L. A., Akey, A. J., Aziz, M. J. & Williams, J. S. (2016). Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material. Journal of Applied Physics, 119, Article ID 183102.
Open this publication in new window or tab >>Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material
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2016 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 119, article id 183102Article in journal (Refereed) Published
Keywords
X-ray diffraction, semiconductor epitaxial layers, Rutherford backscattering, tin alloys, transmission electron microscopy, ion implantation, chemical vapour deposition, semiconductor growth, molecular beam epitaxial growth, semiconductor materials, Raman spectra, germanium alloys, conduction bands
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
urn:nbn:se:uu:diva-351516 (URN)10.1063/1.4948960 (DOI)
Available from: 2018-05-28 Created: 2018-05-28 Last updated: 2018-05-30Bibliographically approved
Kiran, M. S., Tran, T., Smillie, L. A., Haberl, B., Subianto, D., Williams, J. & Bradby, J. (2015). Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation. Journal of Applied Physics, 117, Article ID 205901.
Open this publication in new window or tab >>Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation
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2015 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 117, article id 205901Article in journal (Refereed) Published
Keywords
crystal defects, nanoindentation, crystal structure, deformation, elemental semiconductors, solid-state phase transformations, optical microscopy, silicon
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
urn:nbn:se:uu:diva-351514 (URN)10.1063/1.4921534 (DOI)
Available from: 2018-05-28 Created: 2018-05-28 Last updated: 2018-05-30Bibliographically approved
Kiran, M. & Tran, T. (2015). Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation. Journal of Applied Physics, 117(20), 205901
Open this publication in new window or tab >>Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation
2015 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 117, no 20, p. 205901-Article in journal (Refereed) Published
Abstract [en]

This study uses high-temperature nanoindentation coupled with in situ electrical measurements to investigate the temperature dependence (25-200 degrees C) of the phase transformation behavior of diamond cubic (dc) silicon at the nanoscale. Along with in situ indentation and electrical data, ex situ characterizations, such as Raman and cross-sectional transmission electron microscopy, have been used to reveal the indentation-induced deformation mechanisms. We find that phase transformation and defect propagation within the crystal lattice are not mutually exclusive deformation processes at elevated temperature. Both can occur at temperatures up to 150 degrees C but to different extents, depending on the temperature and loading conditions. For nanoindentation, we observe that phase transformation is dominant below 100 degrees C but that deformation by twinning along {111} planes dominates at 150 degrees C and 200 degrees C. This work, therefore, provides clear insight into the temperature dependent deformation mechanisms in dc-Si at the nano

Keywords
crystal defects, nanoindentation, crystal structure, deformation, elemental semiconductors, solid-state phase transformations, optical microscopy, silicon
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
urn:nbn:se:uu:diva-351523 (URN)10.1063/1.4921534 (DOI)
Available from: 2018-05-28 Created: 2018-05-28 Last updated: 2018-09-13Bibliographically approved
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ORCID iD: ORCID iD iconorcid.org/0000-0002-1393-1723

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