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Tran, T., Mathews, J. & Williams, J. S. (2019). Towards a direct band gap group IV Ge-based material. Materials Science in Semiconductor Processing, 92, 39-46
Open this publication in new window or tab >>Towards a direct band gap group IV Ge-based material
2019 (English)In: Materials Science in Semiconductor Processing, ISSN 1369-8001, E-ISSN 1873-4081, Vol. 92, p. 39-46Article, review/survey (Refereed) Published
Abstract [en]

A silicon-compatible laser source is of utmost importance for a successful photonic integrated circuit. The conventional solution using direct band gap III-V materials adds significant complexity into the fabrication process because the active materials have to be bonded or grown on a largely mismatched silicon substrate. Recently, germanium has been considered a promising material for silicon photonic applications due to its interesting electronic band structure. Several concepts to realise a direct band gap Ge-based material will be reviewed in this paper, such as: tensile strain combined with high n-type doping, high tensile strain created by micromachining, synthesis of Ge-Sn alloys by chemical vapour deposition and, in particular, synthesis of Ge-Sn alloys by ion implantation followed by pulsed laser melting (PLM). Besides providing a very high level of reproducibility and purity in conventional device fabrication, ion implantation followed by PLM is shown to have potential for realising an intrinsically direct band gap material of high quality. Producing a 10at. % Sn alloy is now possible and a highly strain-relaxed layer can also be realised by this technique.

Place, publisher, year, edition, pages
ELSEVIER SCI LTD, 2019
National Category
Condensed Matter Physics Other Materials Engineering
Identifiers
urn:nbn:se:uu:diva-377102 (URN)10.1016/j.mssp.2018.05.037 (DOI)000456319400006 ()
Available from: 2019-02-18 Created: 2019-02-18 Last updated: 2019-02-18Bibliographically approved
Tran, T., Gandhi, H. H., Pastor, D., Aziz, M. J. & Williams, J. (2017). Ion-beam synthesis and thermal stability of highly tin-concentrated germanium – tin alloys. Materials Science in Semiconductor Processing, 62, 192-195
Open this publication in new window or tab >>Ion-beam synthesis and thermal stability of highly tin-concentrated germanium – tin alloys
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2017 (English)In: Materials Science in Semiconductor Processing, ISSN 1369-8001, E-ISSN 1873-4081, Vol. 62, p. 192-195Article in journal (Refereed) Published
Keywords
Germanium-tin alloys, Ion implantation, Semiconductor processing, Direct bandgap group IV alloys
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
urn:nbn:se:uu:diva-351522 (URN)10.1016/j.mssp.2016.10.049 (DOI)
Available from: 2018-05-28 Created: 2018-05-28 Last updated: 2018-05-30Bibliographically approved
Tran, T. T., Pastor, D., Gandhi, H. H., Smillie, L. A., Akey, A. J., Aziz, M. J. & Williams, J. S. (2016). Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material. Journal of Applied Physics, 119, Article ID 183102.
Open this publication in new window or tab >>Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material
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2016 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 119, article id 183102Article in journal (Refereed) Published
Keywords
X-ray diffraction, semiconductor epitaxial layers, Rutherford backscattering, tin alloys, transmission electron microscopy, ion implantation, chemical vapour deposition, semiconductor growth, molecular beam epitaxial growth, semiconductor materials, Raman spectra, germanium alloys, conduction bands
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
urn:nbn:se:uu:diva-351516 (URN)10.1063/1.4948960 (DOI)
Available from: 2018-05-28 Created: 2018-05-28 Last updated: 2018-05-30Bibliographically approved
Kiran, M. S., Tran, T., Smillie, L. A., Haberl, B., Subianto, D., Williams, J. & Bradby, J. (2015). Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation. Journal of Applied Physics, 117, Article ID 205901.
Open this publication in new window or tab >>Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation
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2015 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 117, article id 205901Article in journal (Refereed) Published
Keywords
crystal defects, nanoindentation, crystal structure, deformation, elemental semiconductors, solid-state phase transformations, optical microscopy, silicon
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
urn:nbn:se:uu:diva-351514 (URN)10.1063/1.4921534 (DOI)
Available from: 2018-05-28 Created: 2018-05-28 Last updated: 2018-05-30Bibliographically approved
Kiran, M. & Tran, T. (2015). Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation. Journal of Applied Physics, 117(20), 205901
Open this publication in new window or tab >>Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation
2015 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 117, no 20, p. 205901-Article in journal (Refereed) Published
Abstract [en]

This study uses high-temperature nanoindentation coupled with in situ electrical measurements to investigate the temperature dependence (25-200 degrees C) of the phase transformation behavior of diamond cubic (dc) silicon at the nanoscale. Along with in situ indentation and electrical data, ex situ characterizations, such as Raman and cross-sectional transmission electron microscopy, have been used to reveal the indentation-induced deformation mechanisms. We find that phase transformation and defect propagation within the crystal lattice are not mutually exclusive deformation processes at elevated temperature. Both can occur at temperatures up to 150 degrees C but to different extents, depending on the temperature and loading conditions. For nanoindentation, we observe that phase transformation is dominant below 100 degrees C but that deformation by twinning along {111} planes dominates at 150 degrees C and 200 degrees C. This work, therefore, provides clear insight into the temperature dependent deformation mechanisms in dc-Si at the nano

Keywords
crystal defects, nanoindentation, crystal structure, deformation, elemental semiconductors, solid-state phase transformations, optical microscopy, silicon
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
urn:nbn:se:uu:diva-351523 (URN)10.1063/1.4921534 (DOI)
Available from: 2018-05-28 Created: 2018-05-28 Last updated: 2018-09-13Bibliographically approved
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ORCID iD: ORCID iD iconorcid.org/0000-0002-1393-1723

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