uu.seUppsala universitets publikasjoner
Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Immunosensor utilizing a shear mode thin film bulk acoustic sensor
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
2007 (engelsk)Inngår i: Sensors and actuators. B, Chemical, ISSN 0925-4005, E-ISSN 1873-3077, Vol. 127, nr 1, s. 248-252Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

An AlN thin film electro-acoustic resonator has been fabricated employing a reactive sputtering process for the deposition of an AlN thin film with inclined c-axis for excitation of the shear mode for operation in liquid media. The main objective is to investigate the efficiency of the micro-fluidic channel system integrated in the silicon wafer underneath the AlN resonator. A comparative study between the shear mode thin film bulk acoustic resonator (FBAR) and a quartz crystal microbalance (QCM) using a competitive antibody–antigen association process for detection of drug molecules is presented.

sted, utgiver, år, opplag, sider
2007. Vol. 127, nr 1, s. 248-252
Emneord [en]
Competitive immunosensor, Shear mode FBAR, Drug detection
HSV kategori
Identifikatorer
URN: urn:nbn:se:uu:diva-11757DOI: 10.1016/j.snb.2007.07.051ISI: 000250691100039OAI: oai:DiVA.org:uu-11757DiVA, id: diva2:39526
Tilgjengelig fra: 2007-10-16 Laget: 2007-10-16 Sist oppdatert: 2017-12-11bibliografisk kontrollert
Inngår i avhandling
1. Thin Film Electroacoustic Devices for Biosensor Applications
Åpne denne publikasjonen i ny fane eller vindu >>Thin Film Electroacoustic Devices for Biosensor Applications
2009 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

Biosensors are today important devices within various application areas.

In this thesis a new type of label-free biosensor device is studied, which is fabricated using the same processes used for the fabrication of integrated circuits. This enables tighter integration and further sensors/biosensor miniaturization. The device is a so-called Thin Film Bulk Acoustic Resonator (FBAR). Within this thesis a low temperature reactive sputtering process for growing AlN thin films with a c-axis inclination of 20-30o has been developed. This enables shear mode FBAR fabrication suitable for in-liquid operation, essential for biosensor applications. Shear mode FBARs were fabricated operating at frequencies above 1GHz exhibiting Q values of 100-200 in water and electromechanical coupling factors kt2 of about 1.8%. This made it possible to move the thickness excited shear mode sensing of biological layers into a new sensing regime using substantially higher operation frequencies than the conventionally used quartz crystal microbalance (QCM) operating at 5-20MHz. Measured noise levels of shear mode FBARs in contact with water showed the resolution to be in the range 0.3ng/cm2 to 7.5ng/cm2. This demonstrated the FBAR resolution without any averaging or additional stabilization measures already to be in the same range as the conventional QCM (5ng/cm2), suggesting that FBARs may be a competitive and low cost alternative to QCM. The linear thickness limit for sensing of biomolecular layers was concluded to be larger than the thickness of the majority of the molecular systems envisaged for FBAR biosensor applications. A temperature compensated shear mode FBAR composite structure was demonstrated with retained coupling factor and Q-value by utilizing the second mode of operation. Understanding has been gained on the sensor operation as well as on how the design parameters influence its performance. Specifically, sensitivity amplification utilizing low acoustic impedance layers in the FBAR structure has been demonstrated and explained. Further, temperature compensated Lamb mode (FPAR) devices were also studied and demonstrated with optimized electromechanical couplings.

sted, utgiver, år, opplag, sider
Uppsala: Acta Universitatis Upsaliensis, 2009. s. 96
Serie
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 609
HSV kategori
Forskningsprogram
Elektronik
Identifikatorer
urn:nbn:se:uu:diva-89424 (URN)978-91-554-7432-4 (ISBN)
Disputas
2009-03-27, Å2005, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 10:15 (engelsk)
Opponent
Veileder
Prosjekter
wisenet
Tilgjengelig fra: 2009-03-06 Laget: 2009-02-13 Sist oppdatert: 2011-01-17bibliografisk kontrollert

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekst

Personposter BETA

Wingqvist, GunillaBjurström, JohanKatardjiev, Ilia

Søk i DiVA

Av forfatter/redaktør
Wingqvist, GunillaBjurström, JohanKatardjiev, Ilia
Av organisasjonen
I samme tidsskrift
Sensors and actuators. B, Chemical

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 825 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf