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Graded and alloyed II-VI semiconductors for photovoltaic buffer layers grown by atomic layer deposition (ALD)
Stanford University.
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik. Stanford University.ORCID-id: 0000-0001-6589-3514
Stanford University.
Stanford University.
Vise andre og tillknytning
2011 (engelsk)Konferansepaper, Publicerat paper (Fagfellevurdert)
sted, utgiver, år, opplag, sider
Seattle, WA: IEEE , 2011. 002691-002695 s.
Emneord [en]
II-VI semiconductors, atomic layer deposition, buffer layers, cadmium compounds, energy gap, extinction coefficients, photovoltaic effects, refractive index, semiconductor growth, semiconductor thin films, solar absorber-convertors, stoichiometry, wide band gap semiconductors, zinc compounds, CBD films, CdxZn1-xOyS1-y, CuInS2, IV curves, absorbers, alloyed ll-VI semiconductors, chemical bath deposition films, chemical properties, crystal phases, diethylzinc, dimethylcadmium, graded ll-VI semiconductors, material properties, mixed film deposition, optical constants, optical properties, photovoltaic buffer layers, quantum efficiency measurement, temperature 150 degC, Optical buffering, Optical films, Optical variables control, Photonic band gap
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Identifikatorer
URN: urn:nbn:se:uu:diva-222514DOI: 10.1109/PVSC.2011.6186503OAI: oai:DiVA.org:uu-222514DiVA: diva2:711814
Konferanse
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Tilgjengelig fra: 2014-04-11 Laget: 2014-04-11 Sist oppdatert: 2017-01-25

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