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MM-wave integrated RF-MEMS tunable cavity resonators, filters and ultra-low phase-noise oscillators
Universite catholique de Louvain (UCL). (Microwave group)
2011 (engelsk)Doktoravhandling, monografi (Annet vitenskapelig)
Abstract [en]

Within the Microelectronics Industry, the core research is focused on the realization of the Moore's law, which states that circuit density doubles every 24 months, shaping the framework of the More of Moore paradigm. However, Moore's law is expected to end, as devices are reaching limitations inherent to the approach of the atomical dimensions. Alternative research paths emerged, forming the new More than Moore paradigm. This consists in using the microfabrication technological knowhow towards the realization of alternative devices and applications, among others the miniaturization and integration of Radio Frequency (RF) devices by Micro Electromechanical Systems (MEMS), i.e. RF-MEMS. The RF-MEMS devices offer high performance, tuning by movable parts and open new perspectives at extra high frequency i.e. 30 to 300 GHz. In this thesis, cavity resonators' design and characterization are introduced, as a preliminary discussion. Their integration in the bulk of High Resistivity Silicon (HR-Si) wafers by micromachining techniques is realized at 60 and 75 GHz. Further, the tuning performance induced by internal volumes of perturbation is thoroughly investigated. Furthermore, the integration of a voltage controlled tuning system for air filled cavity resonators is realized at 60 GHz, using a MEMS based Faraday cage. Additionally, a new miniaturization concept is demonstrated using High Impedance Surfaces (HIS). A seven-pole Chebyshev bandpass filter is realized in Low Temperature Co-fired Ceramic (LTCC). Finally, ultra-low phase-noise oscillators at 60 GHz are realized using cavity resonators integrated in HR-Si and LTCC. These oscillators improve the state of the art for integrated oscillators in the frequency band from 40 to 80 GHz, demonstrating the highest factor of merit, to our best knowledge and to date, FoM = -199 dBcHz @ 1MHz offset from the carrier frequency, fosc = 59.98 GHz.

sted, utgiver, år, opplag, sider
Universite catholique de Louvain (UCL) , 2011. , s. 277
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Identifikatorer
URN: urn:nbn:se:uu:diva-287657OAI: oai:DiVA.org:uu-287657DiVA, id: diva2:923230
Disputas
2011-06-17, 12:00 (engelsk)
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Tilgjengelig fra: 2016-04-28 Laget: 2016-04-25 Sist oppdatert: 2017-01-25bibliografisk kontrollert

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http://hdl.handle.net/2078.1/80436

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