uu.seUppsala universitets publikationer
Ändra sökning
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Comparing XPS and ToF-ERDA measurement of high-k dielectric materials
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Jonfysik.
2007 (Engelska)Konferensbidrag, Publicerat paper (Refereegranskat)
Ort, förlag, år, upplaga, sidor
2007.
Nationell ämneskategori
Teknik och teknologier
Identifikatorer
URN: urn:nbn:se:uu:diva-12732OAI: oai:DiVA.org:uu-12732DiVA, id: diva2:40501
Konferens
17th International Vacuum Conference (IVC-17), 13th International Conference on Surface science (ICSS-13), International Conference on Nanoscience and Technology 2007 (ICN+T 2007) Stockholm, Sweden, July 2-6 (2007) publ in Journal of Physics: Conference Series
Tillgänglig från: 2008-01-11 Skapad: 2008-01-11 Senast uppdaterad: 2016-04-11Bibliografiskt granskad
Ingår i avhandling
1. Electro-Acoustic and Electronic Applications Utilizing Thin Film Aluminium Nitride
Öppna denna publikation i ny flik eller fönster >>Electro-Acoustic and Electronic Applications Utilizing Thin Film Aluminium Nitride
2009 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

In recent years there has been a huge increase in the growth of communication systems such as mobile phones, wireless local area networks (WLAN), satellite navigation and various other forms of wireless data communication that have made analogue frequency control a key issue. The increase in frequency spectrum crowding and the increase of frequency into microwave region, along with the need for minimisation and capacity improvement, has shown the need for the development of high performance, miniature, on-chip filters operating in the low to medium GHz frequency range. This has hastened the need for alternatives to ceramic resonators due to their limits in device size and performance, which in turn, has led to development of the thin film electro-acoustics industry with surface acoustic wave (SAW) and bulk acoustic wave (BAW) filters now fabricated in their millions. Further, this new technology opens the way for integrating the traditionally incompatible integrated circuit (IC) and electro-acoustic (EA) technologies, bringing about substantial economic and performance benefits.

In this thesis the compatibility of aluminium nitride (AlN) to IC fabrication is explored as a means for furthering integration issues. Various issues have been explored where either tailoring thin film bulk acoustic resonator (FBAR) design, such as development of an improved solidly mounted resonator (SMR) technology, and use of IC technology, such as chemical mechanical polishing (CMP) or nickel silicide (NiSi), has made improvements beneficial for resonator fabrication or enabled IC integration. The former has resulted in major improvements to Quality factor, power handling and encapsulation respectively. The later has provided alternative methods to reduce electro- or acoustomigration, reduced device size, for plate waves, supplied novel low acoustic impedance material for high power applications and alternative electrodes for use in high temperature sensors.

Another method to enhance integration by using the piezoelectric material, AlN, in the IC side has also been explored. Here methods for analysing AlN film contamination and stoichiometry have been used for analysis of AlN as a high-k dielectric material. This has even brought benefits in knowledge of film composition for use as a passivation material with SiC substrates, investigated in high power high frequency applications. Lastly AlN has been used as a buried insulator material for new silicon-on-insulator substrates (SOI) for increased heat conduction. These new substrates have been analysed with further development for improved performance indicated.

Ort, förlag, år, upplaga, sidor
Uppsala: Acta Universitatis Upsaliensis, 2009. s. 77
Serie
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 643
Nyckelord
AlN, FBAR, FPAR, CMP, SOI, Nickel Silicide, Wafer Bonding
Nationell ämneskategori
Annan elektroteknik och elektronik
Forskningsämne
Elektronik
Identifikatorer
urn:nbn:se:uu:diva-100957 (URN)978-91-554-7522-2 (ISBN)
Disputation
2009-05-22, Siegbahnsalen, The Ångström Laboratory, Lägerhyddsvägen 1, Uppsala, 09:30 (Engelska)
Opponent
Handledare
Projekt
wisenet
Tillgänglig från: 2009-04-29 Skapad: 2009-04-14 Senast uppdaterad: 2011-01-17Bibliografiskt granskad

Open Access i DiVA

Fulltext saknas i DiVA

Personposter BETA

Martin, DavidEnlund, JohannesKappertz, OliverJensen, Jens

Sök vidare i DiVA

Av författaren/redaktören
Martin, DavidEnlund, JohannesKappertz, OliverJensen, Jens
Av organisationen
Fasta tillståndets elektronikJonfysik
Teknik och teknologier

Sök vidare utanför DiVA

GoogleGoogle Scholar

urn-nbn

Altmetricpoäng

urn-nbn
Totalt: 934 träffar
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf