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An impedance model for the low-frequency noise originating from the dynamic hydrogen ion reactivity at the solid/liquid interface
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2017 (English)In: Sensors and actuators. B, Chemical, ISSN 0925-4005, E-ISSN 1873-3077, Vol. 254, p. 363-369Article in journal (Refereed) Published
Abstract [en]

Understanding the dynamics of hydrogen ion reactivity at the solid/liquid interface is of paramount importance for applications involving ion sensing in electrolytes. However, the correlation of this interfacial process to noise generation is poorly characterized. Here, the relationship is unveiled by characterizing the interfacial process with impedance spectroscopy assisted by a dedicated electrochemical impedance model. The model incorporates both thermodynamic and kinetic properties of the amphoteric hydrogen ion site-binding reactions with the surface OH groups. It further takes into consideration the distributed nature of the characteristic energy of the binding sites. The simulated impedance matches the experimental data better with an energy distribution of the kinetic parameters than with that of the thermodynamic ones. Since the potentiometric low-frequency noise (LFN) originating from the solid/liquid interface correlates excellently with the real part of its electrochemical impedance spectrum, this work establishes a method for evaluating sensing surface quality aimed at mitigating LFN.

Place, publisher, year, edition, pages
2017. Vol. 254, p. 363-369
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-326714DOI: 10.1016/j.snb.2017.07.054ISI: 000413308000045OAI: oai:DiVA.org:uu-326714DiVA, id: diva2:1128502
Funder
Swedish Research Council, VR 2014-5588Göran Gustafsson Foundation for promotion of scientific research at Uppala University and Royal Institute of Technology, GG 1459BCarl Tryggers foundation , CTS14-527Stiftelsen Olle Engkvist Byggmästare, 2016/39Available from: 2017-07-26 Created: 2017-07-26 Last updated: 2019-06-26Bibliographically approved

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Zhang, DaZhang, Shi-LiZhang, Zhen

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