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High Voc in (Cu,Ag)(In,Ga)Se2 Solar Cells
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.ORCID iD: 0000-0003-4111-4613
Solibro Res AB, S-75651 Uppsala, Sweden..
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.ORCID iD: 0000-0001-5736-2000
Solibro Res AB, S-75651 Uppsala, Sweden..
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2017 (English)In: IEEE Journal of Photovoltaics, ISSN 2156-3381, E-ISSN 2156-3403, Vol. 7, no 6, p. 1789-1794Article in journal (Refereed) Published
Abstract [en]

In this contribution, we show that silver substitution for copper in Cu(In,Ga)Se-2 (CIGS) to form (Ag,Cu)(In, Ga)Se-2 (ACIGS) leads to a reduction of the voltage loss expressed as E-g/q-V-oc. This, in turn, leads to higher device efficiencies as compared to similar CIGS devices without Ag. We report V-oc at 814 mV at a conversion efficiency of 21% for our best ACIGS device with 20% of the group I element consisting of silver. Comparing ACIGS and CIGS devices with the same Ga/(Ga+ In) ratio, the ACIGS devices exhibit about 0.05 eV higher bandgap. Alkali postdeposition treatment with KF leads to improvements in efficiency both for CIGS and ACIGS, but we find that the dose of KF needed for optimum device for ACIGS is 10-20% of the dose used for CIGS.

Place, publisher, year, edition, pages
2017. Vol. 7, no 6, p. 1789-1794
Keywords [en]
ACIGS, (Ag, Cu)(Ga, In)Se-2, KF pdt, KF post deposition treatment, thin film solar cells
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:uu:diva-341656DOI: 10.1109/JPHOTOV.2017.2756058ISI: 000413934100044OAI: oai:DiVA.org:uu-341656DiVA, id: diva2:1183332
Funder
Swedish Foundation for Strategic Research StandUpAvailable from: 2018-02-16 Created: 2018-02-16 Last updated: 2018-02-16Bibliographically approved

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Edoff, MarikaShariati Nilsson, NinaStolt, OlofStolt, Lars

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