uu.seUppsala University Publications
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Addressing the impact of rear surface passivation mechanisms on ultra-thin Cu(In,Ga)Se2 solar cell performances using SCAPS 1-D model
ICTEAM, Université catholique de Louvain, Louvain-la-Neuve 1348, Belgium.
ICTEAM, Université catholique de Louvain, Louvain-la-Neuve 1348, Belgium.
ICTEAM, Université catholique de Louvain, Louvain-la-Neuve 1348, Belgium ; School of Physics and Electronics, Hunan University, Changsha 410082, China.
School of Physics and Electronics, Hunan University, Changsha 410082, China.
Show others and affiliations
2017 (English)In: Solar Energy, ISSN 0038-092X, E-ISSN 1471-1257, Vol. 157, p. 603-613, article id 1708055Article in journal (Refereed) Published
Abstract [en]

We present a (1-D) SCAPS device model to address the following: (i) the surface passivation mechanisms (i.e.field-effect and chemical), (ii) their impact on the CIGS solar cell performance for varying CIGS absorberthickness, (iii) the importance of fixed charge type (+/−) and densities of fixed and interface trap charges, and(iv) the reasons for discrete gains in the experimental cell efficiencies (previously reported) for varying CIGSabsorber thickness. First, to obtain a reliable device model, the proposed set of parameters is validated for bothfield-effect (due to fixed charges) and chemical passivation (due to interface traps) using a simple M-I-S teststructure and experimentally extracted values (previously reported) into the SCAPS simulator. Next, we providefigures of merits without any significant loss in the solar cell performances for minimum net −Qf and maximumacceptable limit for Dit, found to be ∼5 × 1012 cm−2 and ∼1 × 1013 cm−2 eV−1 respectively. We next showthat the influence of negative fixed charges in the rear passivation layer (i.e. field-effect passivation) is morepredominant than that of the positive fixed charges (i.e. counter-field effect) especially while considering ultrathin(<0.5 μm) absorber layers. Furthermore, we show the importance of rear reflectance on the short-circuitphotocurrent densities while scaling down the CIGS absorber layers below 0.5 μm under interface chemical andfield-effect passivation mechanisms. Finally, we provide the optimal rear passivation layer parameters for efficienciesgreater than 20% with ultra-thin CIGS absorber thickness (<0.5 μm). Based on these simulation results,we confirm that a negatively charged rear surface passivation with nano-point contact approach is efficient forthe enhancement of cell performances, especially while scaling down the absorber thickness below 0.5 μm.

Place, publisher, year, edition, pages
Elsevier, 2017. Vol. 157, p. 603-613, article id 1708055
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Physics with specialization in Global Energy Resources
Identifiers
URN: urn:nbn:se:uu:diva-355664DOI: 10.1016/j.solener.2017.08.055OAI: oai:DiVA.org:uu-355664DiVA, id: diva2:1230748
Part of project
ARCIGS-M
Funder
EU, Horizon 2020, 720887Available from: 2018-07-04 Created: 2018-07-04 Last updated: 2019-05-09Bibliographically approved

Open Access in DiVA

The full text will be freely available from 2019-09-04 00:00
Available from 2019-09-04 00:00

Other links

Publisher's full text
In the same journal
Solar Energy
Other Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 56 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf