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Light Trapping in Ultrathin CIGS Solar Cells withNanostructured Back Mirrors
Centre for Nanoscience and Nanotechnology, CNRS, Universit´e Paris-Sud, Universit´e Paris-Saclay, 91460 Marcoussis, France.
Laboratoire Nanotechnologies Nanosyst`emes, CNRS UMI-3463, Institut Interdisciplinaire d’Innovation Technologique, Universit´ede Sherbrooke, Sherbrook,QCJ1K 0A5, Canada.
Institute of Research and Development on Photovoltaic Energy, CNRS UMR 7174, 78400 Chatou, France.
Centre for Nanoscience and Nanotechnology, CNRS, Universit´e Paris-Sud, Universit´e Paris-Saclay, 91460 Marcoussis, France.
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2017 (English)In: IEEE Journal of Photovoltaics, ISSN 2156-3381, E-ISSN 2156-3403, Vol. 7, no 5, p. 1433-1441Article in journal (Refereed) Published
Abstract [en]

Novel architectures for light trapping in ultrathinCu(In,Ga)Se2 (CIGS) solar cells are proposed and numericallyinvestigated. They are composed of a flat CIGS layer withnanostructured back mirrors made of highly reflective metals.Multi-resonant absorption is obtained for two different patternsof nanostructured mirrors. It leads to a dramatic increase in theshort-circuit current predicted for solar cells with very thin CIGSlayers. We analyze the resonance phenomena and the density ofphotogenerated carriers in the absorber. We discuss the impactof the material used for the buffer layer (CdS and ZnS) and theback mirror (Mo, Cu, Au, and Ag). We investigate various CIGSthicknesses from 100 to 500 nm, and we compare our numericalresults with experimental data taken from the literature. Wepredict a short-circuit current of Jsc = 33.6 mA/cm2 for a realisticsolar cell made of a 200-nm-thick CIGS absorber with a coppernanostructured mirror. It opens a way toward ultrathin CIGSsolar cells with potential conversion efficiencies up to 20%.

Place, publisher, year, edition, pages
2017. Vol. 7, no 5, p. 1433-1441
Keywords [en]
Absorption, Cu(In, Ga)Se2 (CIGS) and CdTe thin-film solar cells, modeling, nanophotonics, nanostructures, photovoltaic cells.
National Category
Physical Sciences Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-355880DOI: 10.1109/JPHOTOV.2017.2726566OAI: oai:DiVA.org:uu-355880DiVA, id: diva2:1232057
Part of project
ARCIGS-M
Funder
EU, Horizon 2020, 720887Available from: 2018-07-10 Created: 2018-07-10 Last updated: 2019-03-06Bibliographically approved

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