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Insulator Materials for Interface Passivation of Cu(In,Ga)Se-2 Thin Films
Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.
Univ Aveiro, I3N, P-3810193 Aveiro, Portugal;Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal;Inst Politecn Porto, Inst Super Engn Porto, Dept Fis, CIETI, P-4200072 Porto, Portugal.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.ORCID iD: 0000-0002-2402-5427
Univ Aveiro, I3N, P-3810193 Aveiro, Portugal;Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal.
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2018 (English)In: IEEE Journal of Photovoltaics, ISSN 2156-3381, E-ISSN 2156-3403, Vol. 8, no 5, p. 1313-1319Article in journal (Refereed) Published
Abstract [en]

In this work, metal-insulator-semiconductor structures were fabricated in order to study different types of insulators, namely, aluminum oxide (Al2O3), silicon nitride, and silicon oxide (SiOx) to be used as passivation layers in Cu(In,Ga)Se-2 (CIGS) thin-film solar cells. The investigated stacks consisted of SLG/Mo/CIGS/insulator/Al. Raman scattering and photoluminescence measurements were done to verify the insulator deposition influence on the CIGS surface. In order to study the electrical properties of the CIGS-insulator interface, capacitance versus conductance and voltage (C-G-V) measurements were done to estimate the number and polarity of fixed insulator charges (Q(f)). The density of interface defects (D-it) was estimated from capacitance versus conductance and frequency (C-G-f) measurements. This study evidences that the deposition of the insulators at high temperatures (300 degrees C) and the use of a sputtering technique cause surface modification on the CIGS surface. We found that, by varying the SiOx deposition parameters, it is possible to have opposite charges inside the insulator, which would allow its use in different device architectures. The material with lower Dit values was Al2O3 when deposited by sputtering.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2018. Vol. 8, no 5, p. 1313-1319
Keywords [en]
Chemical passivation, Cu(In, Ga)Se-2 (CIGS), field-effect passivation, interface, passivation, solar cells, thin films
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering Condensed Matter Physics
Identifiers
URN: urn:nbn:se:uu:diva-362107DOI: 10.1109/JPHOTOV.2018.2846674ISI: 000442366400021OAI: oai:DiVA.org:uu-362107DiVA, id: diva2:1252337
Part of project
ARCIGS-M
Funder
EU, Horizon 2020, 720887EU, Horizon 2020, 715027Available from: 2018-10-01 Created: 2018-10-01 Last updated: 2019-03-06Bibliographically approved

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Hultqvist, AdamEdoff, Marika

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