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A morphological and electronic study of ultrathin rear passivated Cu(In,Ga)Se2 solar cells
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics. INL Int Iberian Nanotechnol Lab, Ave Mestre Jose Veiga, P-4715330 Braga, Portugal.ORCID iD: 0000-0002-6449-3321
INL Int Iberian Nanotechnol Lab, Ave Mestre Jose Veiga, P-4715330 Braga, Portugal;Univ Aveiro, Dept Fis, Campus Univ Santiago, P-3810193 Aveiro, Portugal.
INL Int Iberian Nanotechnol Lab, Ave Mestre Jose Veiga, P-4715330 Braga, Portugal.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2019 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 671, p. 77-84Article in journal (Refereed) Published
Abstract [en]

The effects of introducing a passivation layer at the rear of ultrathin Copper Indium Gallium di-Selenide Cu(In,Ga)Se2 (CIGS) solar cells is studied. Point contact structures have been created on 25 nm Al2O3 layer using e-beam lithography. Reference solar cells with ultrathin CIGS layers provide devices with average values of light to power conversion efficiency of 8.1% while for passivated cells values reached 9.5%. Electronic properties of passivated cells have been studied before, but the influence of growing the CIGS on Al2O3 with point contacts was still unknown from a structural and morphological point of view. Scanning Electron Microscopy, X-ray Diffraction and Raman spectroscopy measurements were performed. These measurements revealed no significant morphological or structural differences in the CIGS layer for the passivated samples compared with reference samples. These results are in agreement with the similar values of carrier density (~8 x 1016 cm-3) and depletion region (~160 nm) extracted using electrical measurements. A detailed comparison between both sample types in terms of current-voltage, external quantum efficiency and photoluminescence measurements show very different optoelectronic behaviour which is indicative of a successful passivation. SCAPS simulations are done to explain the observed results in view of passivation of the rear interface.

Place, publisher, year, edition, pages
2019. Vol. 671, p. 77-84
Keywords [en]
Passivation, Copper indium gallium di-selenide, Solar cells, Ultrathin, Absorber, Thin film
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:uu:diva-375804DOI: 10.1016/j.tsf.2018.12.028ISI: 000455998000013OAI: oai:DiVA.org:uu-375804DiVA, id: diva2:1288495
Conference
European-Materials-Research-Society (EMRS) Spring Meeting / Sympsium A on Thin Film Chalcogenide Photovoltaic Materials (ChalcogenidePV), JUN 18-22, 2018, Strasbourg, FRANCE
Part of project
ARCIGS-M
Funder
EU, Horizon 2020, 720887Available from: 2019-02-13 Created: 2019-02-13 Last updated: 2019-02-13Bibliographically approved

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The full text will be freely available from 2020-12-16 00:00
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Bose, SouravChen, Wei-ChaoShariati Nilsson, NinaEdoff, Marika

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