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Microstructural Characterization of Sulfurization Effects in Cu(In,Ga)Se-2 Thin Film Solar Cells
Chalmers Univ Technol, Dept Phys, S-41296 Gothenburg, Sweden.ORCID-id: 0000-0003-2651-482X
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.ORCID-id: 0000-0002-3461-6036
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.ORCID-id: 0000-0002-7392-4701
Chalmers Univ Technol, Dept Phys, S-41296 Gothenburg, Sweden.ORCID-id: 0000-0002-6097-6895
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2019 (engelsk)Inngår i: Microscopy and Microanalysis, ISSN 1431-9276, E-ISSN 1435-8115, Vol. 25, nr 2, s. 532-538Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Surface sulfurization of Cu(In,Ga)Se-2 (CIGSe) absorbers is a commonly applied technique to improve the conversion efficiency of the corresponding solar cells, via increasing the bandgap towards the heterojunction. However, the resulting device performance is understood to be highly dependent on the thermodynamic stability of the chalcogenide structure at the upper region of the absorber. The present investigation provides a high-resolution chemical analysis, using energy dispersive X-ray spectrometry and laser-pulsed atom probe tomography, to determine the sulfur incorporation and chemical re-distribution in the absorber material. The post-sulfurization treatment was performed by exposing the CIGSe surface to elemental sulfur vapor for 20 min at 500 degrees C. Two distinct sulfur-rich phases were found at the surface of the absorber exhibiting a layered structure showing In-rich and Ga-rich zones, respectively. Furthermore, sulfur atoms were found to segregate at the absorber grain boundaries showing concentrations up to similar to 7 at% with traces of diffusion outwards into the grain interior.

sted, utgiver, år, opplag, sider
CAMBRIDGE UNIV PRESS , 2019. Vol. 25, nr 2, s. 532-538
Emneord [en]
atom probe, Cu(In, Ga)Se-2, solar cells, surface treatment, thin films
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Identifikatorer
URN: urn:nbn:se:uu:diva-385571DOI: 10.1017/S1431927619000151ISI: 000466756600030PubMedID: 30853031OAI: oai:DiVA.org:uu-385571DiVA, id: diva2:1326025
Konferanse
Atom Probe Tomography and Microscopy (APT and M) Conference, JUN 10-15, 2018, Gaithersburg, MD
Forskningsfinansiär
Swedish Foundation for Strategic Research , RMA15-0030Tilgjengelig fra: 2019-06-17 Laget: 2019-06-17 Sist oppdatert: 2019-06-17bibliografisk kontrollert

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Keller, JanLarsen, Jes KRiekehr, LarsEdoff, MarikaPlatzer Björkman, Charlotte

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