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Characterization of nanocrystalline-nanoporous nickel oxide thin films prepared by reactive advanced gas deposition
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.ORCID iD: 0000-0001-8147-9778
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.ORCID iD: 0000-0003-0296-5247
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2019 (English)In: Materials Chemistry and Physics, ISSN 0254-0584, E-ISSN 1879-3312, Vol. 227, p. 98-104Article in journal (Refereed) Published
Abstract [en]

Nanocrystalline-nanoporous Ni oxide is of much interest for gas sensors and other applications. Reactive advanced gas deposition (AGD) stands out as a particularly promising technique for making thin films of this material owing to the techniques ability to separate between the growth of individual nanoparticles and their subsequent deposition to create a consolidated material on a substrate. Here we report on the characterization of Ni oxide films, made by reactive AGD, by several methods. X-ray diffractometry showed that the films had a face centered cubic NiO structure, and scanning electron microscopy indicated a compact nanoparticulate composition. X-ray photoelectron spectroscopy showed the presence of Ni3+ and demonstrated that these states became less prominent upon heat treatment in air. Extended x-ray absorption fine structure analysis elucidated the local atomic structure; in particular, data on interatomic distances and effects of annealing on local disorder showed that the Ni oxide nanoparticles crystallize upon annealing while maintaining their nanoparticle morphology, which is a crucial feature for reproducible fabrication of Ni oxide thin films for gas sensors. Importantly, several techniques demonstrated that grain growth remained modest for annealing temperatures as high as 400 degrees C for 1700-nm-thick films. The present article is a sequel to an earlier one [U. Cindemir et al., Sensors and Actuators B 242 (2017) 132-139] in which we reported on fluctuation-enhanced and conductometric gas sensing with Ni oxide films prepared by AGD.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE SA , 2019. Vol. 227, p. 98-104
Keywords [en]
Nickel oxide, Advanced gas deposition, EXAFS, Atomic structure, Gas sensor
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-387223DOI: 10.1016/j.matchemphys.2019.01.058ISI: 000466617800013OAI: oai:DiVA.org:uu-387223DiVA, id: diva2:1329873
Funder
EU, FP7, Seventh Framework Programme, 267234Available from: 2019-06-25 Created: 2019-06-25 Last updated: 2019-06-25Bibliographically approved

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Cindemir, UmutTopalian, ZarehGranqvist, Claes GöranÖsterlund, LarsNiklasson, Gunnar

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