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Theoretical investigation of ion conduction in three-layered ion-conductor systems: Derivation of the isothermal transient ionic current and frequency-dependent impedance
Uppsala universitet, Medicinska och farmaceutiska vetenskapsområdet, Farmaceutiska fakulteten, Institutionen för farmaci.
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Materialvetenskap.
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Materialvetenskap.
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Materialvetenskap.ORCID-id: 0000-0002-5496-9664
2003 (engelsk)Inngår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 94, s. 1629-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Ion conduction in three-layered ion-conductor systems is considered. Explicit analytic expressions for the isothermal transient ionic current and frequency-dependent impedance are derived. The analysis includes migration, diffusion and space-charge effects as contributors to the ionic motion. The resulting model allows conduction parameters such as diffusion coefficients and ion concentrations in three different layers to be obtained from one single measurement, either in the time or in the frequency domain. The implications of one or more of the layers being mixed ionic/electronic conductors are discussed, and it is argued that the proposed model provides a useful description of the coupled ionic/electronic motion occurring in such a mixed-conductor system.

sted, utgiver, år, opplag, sider
2003. Vol. 94, s. 1629-
HSV kategori
Identifikatorer
URN: urn:nbn:se:uu:diva-90070DOI: 10.1063/1.1590062OAI: oai:DiVA.org:uu-90070DiVA, id: diva2:162200
Tilgjengelig fra: 2002-11-15 Laget: 2002-11-15 Sist oppdatert: 2017-12-14bibliografisk kontrollert
Inngår i avhandling
1. Charge Transport in Transition Metal Oxide Thin Films and Electrochromic Devices
Åpne denne publikasjonen i ny fane eller vindu >>Charge Transport in Transition Metal Oxide Thin Films and Electrochromic Devices
2002 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

Thin film devices for windows, mirrors, space applications and other purposes, have become an essential part of modern technology. A great advantage with a thin film device is the small amount of material used and the compact volume of the device. Dynamic control of thin film device properties is usually obtained by the application of a potential with a resulting charge transport. To understand this charge transport, thus become of great importance to improve, develop, and invent new thin film devices.

Charge transport in transition metal oxide thin films and electrochromic devices have been studied in this thesis using dielectric and electrochemical methods. The dielectric methods used are impedance spectroscopy, the isothermal transient ionic current technique and current-voltage measurements. The electrochemical methods include the galvanostatic intermittent titration technique and electrochemical impedance spectroscopy.

Ion intercalation parameters have been obtained for sputtered and ALD ZrO2 and sputtered TiO2, and the ion conduction processes have been analysed. The dielectric permittivity of as-deposited as well as intercalated thin films of ZrO2 and TiO2 have been studied and electron conduction mechanisms in as-deposited films deduced. From the impedance spectroscopy it is found that the dielectric response changes drastically upon ion intercalation. The complex dielectric response suggests different relaxation processes being important at different levels of intercalation and an explanation built on defect induced dipoles is proposed. Moreover, ion transport in electrochromic devices has been studied. The transient ionic current has been analysed to extract transport parameters both in single layers and whole devices and a deeper understanding of the ionic motion has been achieved.

sted, utgiver, år, opplag, sider
Uppsala: Materialvetenskap, 2002. s. 50
Serie
Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1104-232X ; 779
Emneord
Engineering physics, Teknisk fysik
HSV kategori
Forskningsprogram
Fasta tillståndets fysik
Identifikatorer
urn:nbn:se:uu:diva-3030 (URN)91-554-5473-9 (ISBN)
Disputas
2002-12-06, Polhemsalen, Uppsala, 09:30 (engelsk)
Opponent
Tilgjengelig fra: 2002-11-15 Laget: 2002-11-15 Sist oppdatert: 2015-09-09bibliografisk kontrollert

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