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Growth of Copper(I) Nitride by ALD Using Copper(II) Hexafluoroacetylacetonate, Water and Ammonia as Precursors
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry.
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry.ORCID iD: 0000-0003-0013-380x
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry.
2006 (English)In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 153, no 3, p. C146-C151Article in journal (Other academic) Published
Abstract [en]

Films of copper(I) nitride were deposited by atomic layer deposition (ALD) using copper(II) hexafluoroacetylacetonate, water, and ammonia as precursors. Introduction of a water pulse in the ALD cycle was found to be crucial for initiating film growth on both amorphous SiO2 and single-crystalline α-Al2O3(001) substrates. The water pulses generated an oxidic copper monolayer, which in a subsequent ammonia pulse was converted to the nitride. The films have been grown in the temperature range from 210to302°C . Phase pure films of Cu3N were obtained up to 265°C . At higher deposition temperatures such as 283°C , phase mixtures of Cu3N and Cu were obtained. For temperatures above 302°C films of only Cu were grown. Film growth rate was the same on the two different substrates. The films were randomly oriented on SiO2 . Completely intact films were obtained at a thickness of 20nm . The optical bandgap of the films was measured to be 1.6eV .

Place, publisher, year, edition, pages
2006. Vol. 153, no 3, p. C146-C151
National Category
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-92339DOI: 10.1149/1.2160427ISI: 000235136600042OAI: oai:DiVA.org:uu-92339DiVA, id: diva2:165378
Note

Manuscript title: Growth of copper(I) nitride by atomic layer deposition using copper(II) hexafluoroacetylacetonate, water and ammonia as precursors

Available from: 2004-11-04 Created: 2004-11-04 Last updated: 2019-05-28Bibliographically approved
In thesis
1. Atomic Layer Deposition of Copper, Copper(I) Oxide and Copper(I) Nitride on Oxide Substrates
Open this publication in new window or tab >>Atomic Layer Deposition of Copper, Copper(I) Oxide and Copper(I) Nitride on Oxide Substrates
2004 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Thin films play an important role in science and technology today. By combining different materials, properties for specific applications can be optimised. In this thesis growth of copper, copper(I) oxide and copper(I) nitride on two different substrates, amorphous SiO2 and single crystalline α-Al2O3 by the so called Atomic Layer Deposition (ALD) techniques has been studied. This technique allows precise control of the growth process at monolayer level on solid substrates. Other characteristic features of ALD are that it produces films with excellent step coverage and good uniformity even as extremely thin films on complicated shaped substrates.

Alternative deposition schemes were developed for the materials of interest. It was demonstrated that use of intermediate water pulses affected the deposition pathways considerably. By adding water, the films are thought to grow via formation of an oxide over-layer instead of through a direct reaction between the precursors as in the case without water.

For growth of copper(I) nitride from Cu(hfac)2 and ammonia no film growth occurred without adding water to the growth process. The Cu3N films could be transformed into conducting copper films by post annealing. In copper growth from CuCl and H2 the water affected film growth on the alumina substrates considerably more than on the fused silica substrates. The existence of surface -OH and/or -NHx groups was often found to play an important role, according to both theoretical calculations and experimental results.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2004. p. 57
Series
Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1104-232X ; 1035
Keywords
Inorganic chemistry, Atomic Layer Deposition, ALD, copper, copper(I) oxide, copper(I) nitride, deposition pathway, CuCl, Cu(hfac)2, oxide substrates, epitaxy, DFT, ab-initio, Oorganisk kemi
National Category
Inorganic Chemistry
Identifiers
urn:nbn:se:uu:diva-4651 (URN)91-554-6081-X (ISBN)
Public defence
2004-11-26, Häggsalen, The Ångström Laboratory, Lägerhyddsvägen 1, Uppsala, 10:15
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Supervisors
Available from: 2004-11-04 Created: 2004-11-04Bibliographically approved

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Törndahl, TobiasOttosson, MikaelCarlsson, Jan-Otto

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