uu.seUppsala universitets publikasjoner
Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Photovoltaic and Interfacial Properties of Heterojunctions Containing Dye-sensitized Dense TiO2 and Triarylamine derivatives
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Fysiska institutionen, Fysik I.
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Fysiska institutionen, Fysik I.
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Fysiska institutionen, Fysik I.
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Fysiska institutionen, Fysik I.
Vise andre og tillknytning
2007 (engelsk)Inngår i: Chemistry of Materials, ISSN 0897-4756, E-ISSN 1520-5002, Vol. 19, nr 8, s. 2071-2078Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

A series of solid-state heterojunctions comprising a dense TiO2 film electrode as an electron conductor, a ruthenium polypyridine complex (Ru(dcbpy)2(NCS)2) as a light-absorbing dye, and different triarylamine derivatives as hole conductors were prepared, and their photovoltaic properties as well as the molecular and electronic interfacial structures were investigated. The photovoltaic properties were compared to systems containing the hole conductors dissolved in an organic solvent as well as to a system containing a liquid electrolyte containing the iodide/tri-iodide redox couple. Two of the solid-state heterojunctions showed conversion efficiencies close to those of the system containing the iodide/tri-iodide redox couple, while one system was clearly less efficient. To explain the differences in photovoltaic properties the electronic and molecular interfacial structures of the solid-state heterojunctions were investigated by photoelectron spectroscopy (PES). By valence level PES the electronic energy levels highest in energy for the dye and the hole conductors were mapped, and the differences in energy matching partly explain the trends in photovoltaic properties. Differences in the molecular surface structure of the heterojunctions were also observed from the N Is core level measurements. Specifically it was found that the smaller hole conductor, showing low photocurrent yield, is inserted into the dye layer.

sted, utgiver, år, opplag, sider
2007. Vol. 19, nr 8, s. 2071-2078
HSV kategori
Identifikatorer
URN: urn:nbn:se:uu:diva-94531DOI: 10.1021/cm062498vISI: 000245549500028OAI: oai:DiVA.org:uu-94531DiVA, id: diva2:168408
Tilgjengelig fra: 2006-05-08 Laget: 2006-05-08 Sist oppdatert: 2017-12-14bibliografisk kontrollert
Inngår i avhandling
1. Interfaces in Dye-Sensitized Oxide / Hole-Conductor Heterojunctions for Solar Cell Applications
Åpne denne publikasjonen i ny fane eller vindu >>Interfaces in Dye-Sensitized Oxide / Hole-Conductor Heterojunctions for Solar Cell Applications
2006 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

Nanoporous dye-sensitized solar cells (DSSC) are promising devices for solar to electric energy conversion. In this thesis photoelectron spectroscopy (PES), x-ray absorption spectroscopy (XAS) and photovoltaic measurements are used for studies of the key interfaces in the DSSC.

Photovoltaic properties of new combinations of TiO2/dye/hole-conductor heterojunctions were demonstrated and their interfacial structures were studied. Three different types of hole-conductor materials were investigated: Triarylamine derivatives, a conducting polymer and CuI. The difference in photocurrent and photovoltage properties of the heterojunction due to small changes in the hole-conductor material was followed. Also a series of dye molecules were used to measure the influence of the dye on the photovoltaic properties. Differences in both the energy-level matching and the geometric structure of the interfaces in the different heterojunctions were studied by PES. This combination of photovoltaic and PES measurements shows the possibility to link the interfacial electronic and molecular structure to the functional properties of the device.

Three effective dyes used in the DSSC, Ru(dcbpy)2(NCS)2, Ru(tcterpy)(NCS)3 and an organic dye were studied in detail using PES and XAS and resonant core hole decay spectroscopy. The results gave information of the frontier electronic structure of the dyes and how the dyes are bonded to the TiO2 surface.

Finally, the hole-conductor mechanism in a conducting polymer was investigated theoretically using semi-empirical and ab-initio methods.

sted, utgiver, år, opplag, sider
Uppsala: Acta Universitatis Upsaliensis, 2006. s. 53
Serie
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 188
Emneord
Physics, Photoelectron spectroscopy, Solar cells, Heterojunction, Fysik
Identifikatorer
urn:nbn:se:uu:diva-6892 (URN)91-554-6575-7 (ISBN)
Disputas
2006-05-29, Polhemsalen, Ångströmlaboratoriet, Lägerhyddsv.1, Uppsala, 13:15
Opponent
Veileder
Tilgjengelig fra: 2006-05-08 Laget: 2006-05-08 Sist oppdatert: 2012-10-09bibliografisk kontrollert
2. Surface Science Studies of Metal Oxides Formed by Chemical Vapour Deposition on Silicon
Åpne denne publikasjonen i ny fane eller vindu >>Surface Science Studies of Metal Oxides Formed by Chemical Vapour Deposition on Silicon
2006 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

For an electronic device well-designed interfaces are critical for the performance. Studies of interfaces down to an atomic level are thus highly motivated both from a fundamental and technological point of view. In this thesis, a surface science approach has been employed to study the formation of interfaces in systems relevant for transistor and solar cell applications. Surface science methodology entails ultra high vacuum environment, single crystalline surfaces, submonolayer control of deposited material, surface sensitive spectroscopy and atomic resolution microscopy.

The primary experimental method for characterization is electron spectroscopy. This is a family of very powerful experimental techniques capable of giving information on the atomic level. Additionally, studies have been performed using scanning tunnelling microscopy. Combined these two methods can provide an atomic level characterisation of the geometric and electronic properties of the surface.

The emphasis of this work is placed on ultra thin TiO2 and ZrO2 films grown on silicon substrates by means of ultra-high vacuum metal-organic chemical vapour deposition. ZrO2 has also been grown on SiC and FeCrAl. Deposition has been performed with different process parameters. The interface region of each film has been characterised. The band alignment, a most important issue with regard to the development of new transistor devices, for the ZrO2/Si(100) system has been explored. Decomposition pathways of the metal organic precursors have been studied in detail. Changing process parameters is shown to alter both the precursor decomposition pathway and the nature of the interface region, thus opening the possibility to tailor the material function.

The titanium dioxide films grown in situ have shown to be excellent models of nanostructured electrode materials. In this spirit, interfaces of model systems for the solid-state dye-sensitized solar cell have been studied. Links between device performance and interface structure have been elucidated.

sted, utgiver, år, opplag, sider
Uppsala: Acta Universitatis Upsaliensis, 2006. s. 58
Serie
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 203
Emneord
Physics, chemical vapour deposition, high-k, metal oxides, silicon, dye-solid interface, metal organic, electron spectroscopy, scanning tunnelling microscopy, Fysik
Identifikatorer
urn:nbn:se:uu:diva-7088 (URN)91-554-6622-2 (ISBN)
Disputas
2006-09-29, Polhemsalen, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 13:15 (engelsk)
Opponent
Veileder
Tilgjengelig fra: 2006-09-04 Laget: 2006-09-04 Sist oppdatert: 2012-10-09bibliografisk kontrollert

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekst

Personposter BETA

Hedlund, MariaRyan, DeclanSiegbahn, HansRensmo, Håkan

Søk i DiVA

Av forfatter/redaktør
Hedlund, MariaRyan, DeclanSiegbahn, HansRensmo, Håkan
Av organisasjonen
I samme tidsskrift
Chemistry of Materials

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 646 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf