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Initial stages of ZrO2 chemical vapour deposition on Si(100)-(2x1) from zirconium tetra-tert-butoxide
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Fysiska institutionen, Fysik I.
(engelsk)Manuskript (Annet vitenskapelig)
Identifikatorer
URN: urn:nbn:se:uu:diva-94709OAI: oai:DiVA.org:uu-94709DiVA, id: diva2:168665
Tilgjengelig fra: 2006-09-04 Laget: 2006-09-04 Sist oppdatert: 2012-10-09bibliografisk kontrollert
Inngår i avhandling
1. Surface Science Studies of Metal Oxides Formed by Chemical Vapour Deposition on Silicon
Åpne denne publikasjonen i ny fane eller vindu >>Surface Science Studies of Metal Oxides Formed by Chemical Vapour Deposition on Silicon
2006 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

For an electronic device well-designed interfaces are critical for the performance. Studies of interfaces down to an atomic level are thus highly motivated both from a fundamental and technological point of view. In this thesis, a surface science approach has been employed to study the formation of interfaces in systems relevant for transistor and solar cell applications. Surface science methodology entails ultra high vacuum environment, single crystalline surfaces, submonolayer control of deposited material, surface sensitive spectroscopy and atomic resolution microscopy.

The primary experimental method for characterization is electron spectroscopy. This is a family of very powerful experimental techniques capable of giving information on the atomic level. Additionally, studies have been performed using scanning tunnelling microscopy. Combined these two methods can provide an atomic level characterisation of the geometric and electronic properties of the surface.

The emphasis of this work is placed on ultra thin TiO2 and ZrO2 films grown on silicon substrates by means of ultra-high vacuum metal-organic chemical vapour deposition. ZrO2 has also been grown on SiC and FeCrAl. Deposition has been performed with different process parameters. The interface region of each film has been characterised. The band alignment, a most important issue with regard to the development of new transistor devices, for the ZrO2/Si(100) system has been explored. Decomposition pathways of the metal organic precursors have been studied in detail. Changing process parameters is shown to alter both the precursor decomposition pathway and the nature of the interface region, thus opening the possibility to tailor the material function.

The titanium dioxide films grown in situ have shown to be excellent models of nanostructured electrode materials. In this spirit, interfaces of model systems for the solid-state dye-sensitized solar cell have been studied. Links between device performance and interface structure have been elucidated.

sted, utgiver, år, opplag, sider
Uppsala: Acta Universitatis Upsaliensis, 2006. s. 58
Serie
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 203
Emneord
Physics, chemical vapour deposition, high-k, metal oxides, silicon, dye-solid interface, metal organic, electron spectroscopy, scanning tunnelling microscopy, Fysik
Identifikatorer
urn:nbn:se:uu:diva-7088 (URN)91-554-6622-2 (ISBN)
Disputas
2006-09-29, Polhemsalen, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 13:15 (engelsk)
Opponent
Veileder
Tilgjengelig fra: 2006-09-04 Laget: 2006-09-04 Sist oppdatert: 2012-10-09bibliografisk kontrollert

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