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Wafer-sized WS2 monolayer deposition by sputtering
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Electrical Engineering, Solid-State Electronics.ORCID iD: 0000-0002-9806-1674
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science and Engineering, Solid State Physics. Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France..ORCID iD: 0000-0002-2518-5430
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science and Engineering, Solid State Physics.ORCID iD: 0000-0002-9551-6565
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy.ORCID iD: 0000-0002-6471-1093
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2022 (English)In: Nanoscale, ISSN 2040-3364, E-ISSN 2040-3372, Vol. 14, no 17, p. 6331-6338Article in journal (Refereed) Published
Abstract [en]

We demonstrate that tungsten disulphide (WS2) with thicknesses ranging from monolayer (ML) to several monolayers can be grown on SiO2/Si, Si, and Al2O3 by pulsed direct current-sputtering. The presence of high quality monolayer and multilayered WS2 on the substrates is confirmed by Raman spectroscopy since the peak separations between the A(1g)-E-2g and A(1g)-2LA vibration modes exhibit a gradual increase depending on the number of layers. X-ray diffraction confirms a textured (001) growth of WS2 films. The surface roughness measured with atomic force microscopy is between 1.5 and 3 angstrom for the ML films. The chemical composition WSx (x = 2.03 +/- 0.05) was determined from X-ray Photoelectron Spectroscopy. Transmission electron microscopy was performed on a multilayer film to show the 2D layered structure. A unique method for growing 2D layers directly by sputtering opens up the way for designing 2D materials and batch production of high-uniformity and high-quality (stochiometric, large grain sizes, flatness) WS2 films, which will advance their practical applications in various fields.

Place, publisher, year, edition, pages
Royal Society of Chemistry (RSC) , 2022. Vol. 14, no 17, p. 6331-6338
National Category
Materials Chemistry
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URN: urn:nbn:se:uu:diva-484453DOI: 10.1039/d1nr08375aISI: 000770085100001PubMedID: 35297938OAI: oai:DiVA.org:uu-484453DiVA, id: diva2:1695900
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Swedish Research Council, 2017-06816Swedish Research Council, 2014-6463Swedish Research Council, 2018-05336Available from: 2022-09-15 Created: 2022-09-15 Last updated: 2022-09-15Bibliographically approved

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Villamayor, Michelle Marie S.Husain, SajidOropesa-Nuñez, ReinierJohansson, FredrikLindblad, RebeckaSvedlindh, PeterLindblad, AndreasNyberg, Tomas

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Villamayor, Michelle Marie S.Husain, SajidOropesa-Nuñez, ReinierJohansson, FredrikLindblad, RebeckaPrevot, GeoffroySvedlindh, PeterLindblad, AndreasNyberg, Tomas
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Solid-State ElectronicsSolid State PhysicsDepartment of Physics and AstronomyPhysical ChemistryInorganic ChemistryCondensed Matter Physics of Energy Materials
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