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Excimer-Laser Surface Processing in CH2I2 Atmospheres: Simultaneous Localized Etching of Si and Deposition of C
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Kemiska sektionen, Institutionen för materialkemi, Oorganisk kemi. (oorgansik kemi)
2009 (engelsk)Inngår i: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 156, nr 4, s. D113-D118Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

In the present paper, a complex chemical process involving laser-materials interaction within a strong absorbing gas phase is investigated and characterized. The process utilizes excimer laser pulses to dissociate methylene iodide (CH2I2) in the gas phase and to locally heat the surface of a silicon substrate. These effects induce chemical reactions leading to efficient etching of silicon within the laser-irradiated surface area, in combination with simultaneous deposition of carbon material outside. Because of the sensitive behavior of the photoinduced substrate surface temperature on the absorption conditions in the gas phase, model calculations were performed to improve the design of the system and to analyze the observed experimental results.

sted, utgiver, år, opplag, sider
2009. Vol. 156, nr 4, s. D113-D118
Emneord [en]
carbon, chemical reactions, elemental semiconductors, excimer lasers, laser beam effects, laser beam etching, silicon
HSV kategori
Forskningsprogram
Oorganisk kemi
Identifikatorer
URN: urn:nbn:se:uu:diva-108442DOI: http://dx.doi.org/10.1149/1.3071315ISI: 000263717900037OAI: oai:DiVA.org:uu-108442DiVA, id: diva2:235855
Tilgjengelig fra: 2009-09-18 Laget: 2009-09-18 Sist oppdatert: 2017-12-13bibliografisk kontrollert

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