uu.seUppsala universitets publikasjoner
Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Role of Si implantation in control of underlap length in Schottky-barrier source/drain MOSFETs on ultrathin body SOI
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
Vise andre og tillknytning
2008 (engelsk)Inngår i: Proceedings of ULIS, 2008, s. 175-178Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

This works demonstrates a novel approach using Si implantation prior to Pt deposition and PtSi formation to control the underlap length between the PtSi source/drain regions to the gate in Schottky-Barrier (SB-) MOSFETs. Dopant segregation at the PtSi/Si interface is used to enhance device performance. With the lon /Ioff current ratio as an indicator, optimized Si implant doses are found for both n- and p-channel SB-MOSFETs. Through an effective barrier width, the underlap length has direct implication on the leakage current.

sted, utgiver, år, opplag, sider
2008. s. 175-178
Emneord [en]
MOSFET, Schottky barriers, ion implantation, silicon-on-insulator, PtSi-Si, Schottky barrier source/drain MOSFET, dopant segregation, leakage current, metal-oxide-semiconductor field effect transistor, silicon implantation, silicon on insulator, ultrathin body SOI, underlap length, PtSi, Si implantation, dopant segregation, schottky barrier-MOSFET, underlap length
HSV kategori
Identifikatorer
URN: urn:nbn:se:uu:diva-110994OAI: oai:DiVA.org:uu-110994DiVA, id: diva2:279095
Konferanse
Ultimate Integration of Silicon, Udine, Italy
Tilgjengelig fra: 2009-12-01 Laget: 2009-12-01 Sist oppdatert: 2016-04-13

Open Access i DiVA

Fulltekst mangler i DiVA

Personposter BETA

Olsson, JörgenLu, J.

Søk i DiVA

Av forfatter/redaktør
Olsson, JörgenLu, J.
Av organisasjonen

Søk utenfor DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric

urn-nbn
Totalt: 868 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf