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Oxygen out-diffusion from buried layers in SOI and SiC-SOI substrates
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik. (komponentgrupp)
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Mikrostrukturlaboratoriet, MSL.
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik. (komponentgrupp)
Vise andre og tillknytning
2010 (engelsk)Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 54, nr 2, s. 153-157Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We have made a comparative study of the oxygen out-diffusion process during heat treatment of SOI wafers and SiC-SOI hybrid substrates. SOI materials with three different thicknesses (2, 20 and 410 nm) of buried oxide (BOX) were used in the investigation High-resolution cross-sectional transmission electron microscopy (HRXTEM) together with laser interferometry was used to determine the remaining thickness of the BOX-layer after heat treatment. After complete removal of the BOX-layer of SOI wafers, the St/Si interface appears to be sharp and defect-free. Similar results were obtained for SiC-SOI hybrid substrates after removal of the entire buried oxide layer. For all combinations investigated oxide removal was accompanied by a thickness reduction and roughening of the silicon surface layer as verified by atomic force microscopy (AFM).

sted, utgiver, år, opplag, sider
2010. Vol. 54, nr 2, s. 153-157
Emneord [en]
Oxygen out-diffusion, SOI, silicon carbide, SiC-SOI
HSV kategori
Forskningsprogram
Teknisk fysik med inriktning mot elektronik
Identifikatorer
URN: urn:nbn:se:uu:diva-117563DOI: 10.1016/j.sse.2009.12.011ISI: 000275691400012OAI: oai:DiVA.org:uu-117563DiVA, id: diva2:297977
Tilgjengelig fra: 2012-08-23 Laget: 2010-02-19 Sist oppdatert: 2017-12-12bibliografisk kontrollert
Inngår i avhandling
1. Fabrication and Characterization of Si-on-SiC Hybrid Substrates
Åpne denne publikasjonen i ny fane eller vindu >>Fabrication and Characterization of Si-on-SiC Hybrid Substrates
2013 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

In this thesis, we are making a new approach to fabricate silicon on insulator (SOI). By replacing the buried silicon dioxide and the silicon handling wafer with silicon carbide through hydrophilic wafer bonding, we have achieved silicon on crystalline silicon carbide for the first time and silicon on polycrystalline silicon carbide substrates at 150 mm wafer size. The conditions for the wafer bonding are studied and the surface and bond interface are characterized. Stress free and interfacial defect free hybrid wafer bonding has been achieved.

The thermally unfavourable interfacial oxide that originates from the hydrophilic treatment has been removed through high temperature annealing, denoted as Ox-away. Based on the experimental observations, a model to explain the dynamics of this process has been proposed. Ox-away together with spheroidization are found to be the responsible theories for the behaviour. The activation energy for this process is estimated as 6.4 eV.

Wafer bonding of Si and polycrystalline SiC has been realised by an intermediate layer of amorphous Si. This layer recrystallizes to some extent during heat treatment.

Electronic and thermal testing structures have been fabricated on the 150 mm silicon on polycrystalline silicon carbide hybrid substrate and on the SOI reference substrate. It is shown that our hybrid substrates have similar or improved electrical performance and 2.5 times better thermal conductivity than their SOI counterpart. 2D simulations together with the experimental measurements have been carried out to extract the thermal conductivity of polycrystalline silicon carbide as κpSiC = 2.7 WK-1cm-1.

The realised Si-on-SiC hybrid wafer has been shown to be thermally and electrically superior to conventional SOI and opens up for hybrid integration of silicon and wide band gap material as SiC and GaN.

sted, utgiver, år, opplag, sider
Uppsala: Acta Universitatis Upsaliensis, 2013. s. 58
Serie
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 1093
Emneord
hydrophilic wafer bonding, silicon on silicon carbide, hybrid substrate, oxygen out-diffusion
HSV kategori
Forskningsprogram
Teknisk fysik med inriktning mot elektronik
Identifikatorer
urn:nbn:se:uu:diva-221664 (URN)978-91-554-8794-2 (ISBN)
Disputas
2014-05-16, 2001, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 09:30 (engelsk)
Opponent
Veileder
Tilgjengelig fra: 2014-04-11 Laget: 2014-04-03 Sist oppdatert: 2014-07-25

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