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Impedance studies on Li insertion electrodes of Sn oxide and oxyfluoride
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för materialvetenskap.ORCID-id: 0000-0002-5496-9664
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för materialvetenskap.
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för materialvetenskap.ORCID-id: 0000-0002-8279-5163
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för materialvetenskap.
1996 (engelsk)Inngår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 80, nr 1, s. 233-241Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Films of Sn oxide and oxyfluoride were made by reactive rf magnetron sputtering onto ITO‐coated glass. We analyzed the composition by Rutherford backscattering spectrometry, the structure by x‐ray diffraction, and the surfacetopography by atomic force microscopy. Li intercalation from a liquid electrolyte was more facile in the oxide than in the oxyfluoride, as found from cyclic voltammetry. Impedance spectra were taken for a wide range of frequencies and polarizing voltages. Nyqvist diagrams were interpreted from a circuit model with elements representing Li insertion at the electrolyte/film interface and electron insertion at the film/ITO interface. The data were consistent with a fractal surface of the Sn oxide film, with a dimension in excellent agreement with measures obtained through several independent techniques. The chemical diffusion coefficient was ∼10−13 cm2/s and slightly decreasing with increasing potential for all films.

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1996. Vol. 80, nr 1, s. 233-241
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URN: urn:nbn:se:uu:diva-29750DOI: 10.1063/1.362809OAI: oai:DiVA.org:uu-29750DiVA, id: diva2:57646
Tilgjengelig fra: 2008-10-17 Laget: 2008-10-17 Sist oppdatert: 2017-12-07bibliografisk kontrollert

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