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(Ta1-xNbx)(2)O-5 films produced by atomic layer deposition: Temperature dependent dielectric spectroscopy and room-temperature I-V characteristics
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för materialvetenskap. (Solid state physics)ORCID-id: 0000-0002-5496-9664
Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för materialvetenskap.ORCID-id: 0000-0002-8279-5163
Vise andre og tillknytning
2001 (engelsk)Inngår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 90, nr 9, s. 4532-4542Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Temperature dependent ac dielectric spectroscopy and room-temperature I–V characterization were performed on atomic layer deposited(Ta1−xNbx)2O5films. The high frequency permittivity, as well as the dc conductivity of the films, were found to increase with increasing Nb content. The conduction mechanism in the mixed Ta–Nb oxide films was of the Poole–Frenkel type, while the high field conduction in pure Ta2O5 was space-charge limited. The activation energy for dc conduction was higher in mixed Ta–Nb oxides compared to pure Ta2O5 and Nb2O5films. Irreversible changes in the conduction mechanism took place upon heat treatment above a certain irreversibility temperature. This temperature was higher for the mixed oxides than for the binary ones.

sted, utgiver, år, opplag, sider
2001. Vol. 90, nr 9, s. 4532-4542
Emneord [en]
OXIDE THIN-FILMS; SOLID-SOLUTION; AL2O3 FILMS; CONSTANT; EPITAXY
HSV kategori
Identifikatorer
URN: urn:nbn:se:uu:diva-37520DOI: 10.1063/1.1405837Scopus ID: 2-s2.0-0013326965OAI: oai:DiVA.org:uu-37520DiVA, id: diva2:65419
Tilgjengelig fra: 2008-10-17 Laget: 2008-10-17 Sist oppdatert: 2017-12-06bibliografisk kontrollert

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