The influence of site occupancy on diffusion of hydrogen in vanadiumShow others and affiliations
2017 (English)In: Physical Review B, ISSN 2469-9950, E-ISSN 2469-9969, Vol. 95, no 6, article id 064310Article, review/survey (Refereed) Published
Abstract [en]
We investigate the effect of site occupancy on the chemical diffusion of hydrogen in strained vanadium. The diffusion rate is found to decrease substantially, when hydrogen is occupying octahedral sites as compared to tetrahedral sites. Profound isotope effects are observed when comparing the diffusion rate of H and D. The changes in the diffusion rate are found to be strongly influenced by the changes in the potential energy landscape, as deduced from first-principles molecular dynamics calculations.
Place, publisher, year, edition, pages
2017. Vol. 95, no 6, article id 064310
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:uu:diva-275058DOI: 10.1103/PhysRevB.95.064310ISI: 000395988800002OAI: oai:DiVA.org:uu-275058DiVA, id: diva2:898622
Note
The manuscript version of this article is part of two PhD theses: http://uu.diva-portal.org/smash/record.jsf?pid=diva2:900624
http://uu.diva-portal.org/smash/record.jsf?pid=diva2:950756
2016-01-282016-01-282018-05-14Bibliographically approved
In thesis