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Improved lifetime characteristics in heavy ion irradiated silicon
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
1997 (English)In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ISSN 0168-583X, Vol. 127, 410-413 p.Article in journal (Refereed) Published
Abstract [en]

Silicon samples of various doping concentrations have been irradiated with MeV ions at low doses and different temperatures. Deep level transient spectroscopy (DLTS) has been used to characterise the distributions and productions of the divacancy center (

Place, publisher, year, edition, pages
1997. Vol. 127, 410-413 p.
Keyword [en]
RECOMBINATION CENTERS; DEFECT PRODUCTION; ELECTRON; TRAPS
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-73094OAI: oai:DiVA.org:uu-73094DiVA: diva2:101005
Note
Addresses: Keskitalo N, UNIV UPPSALA, DEPT TECH ELECT, POB 534, S-75121 UPPSALA, SWEDEN. UNIV UPPSALA, DEPT RADIAT SCI, DIV ION PHYS, S-75121 UPPSALA, SWEDEN. ROYAL INST TECHNOL, S-16440 KISTA, STOCKHOLM, SWEDEN.Available from: 2007-03-05 Created: 2007-03-05 Last updated: 2011-01-15

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