Epitaxy of copper on α-Al2O3(0 0 1) by atomic layer deposition
2005 (English)In: Journal of Crystal Growth, Vol. 276, 102-110 p.Article in journal (Refereed) Published
A combined X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM) study have been carried out on copper films grown by atomic layer deposition at 400 °C. The copper films have been grown on single crystalline (0 0 1) oriented α-Al2O3 up to a thickness of 500 nm. The films were relaxed and the diffraction peak broadening in 2θ was mainly dependent on the copper grain size. Broadening of the diffraction peaks in ω was found to be related to defects (mosaicity and intrinsic microstrain). The deposited films were epitaxial and grew with the (1 1 1) plane in parallel to the substrate surface. Extensive twinning in the copper grains in different Cu1 1 1 directions occurred according to the TEM study, both in directions perpendicular to the substrate surface ([1 1 1] and ) and along other 1 1 1 directions as well. As an effect of a twin, an extra Cu(5 1 1) orientation was present in the XRD data.
Place, publisher, year, edition, pages
2005. Vol. 276, 102-110 p.
Epitaxial, Atomic layer epitaxy, Copper, Sapphire
IdentifiersURN: urn:nbn:se:uu:diva-73755DOI: doi:10.1016/j.jcrysgro.2004.10.153OAI: oai:DiVA.org:uu-73755DiVA: diva2:101665