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Electronic structure of GaN measured using soft-x-ray emission and absorption
Uppsala University.
Uppsala University.
Uppsala University.
Uppsala University.
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1996 (English)In: PHYSICAL REVIEW B-CONDENSED MATTER, ISSN 0163-1829, Vol. 54, no 24, 17335-17338 p.Article in journal (Other scientific) Published
Abstract [en]

The electronic structure of thin-film wurtzite GaN has been studied using a combination of soft-x-ray absorption and emission spectroscopies. We have measured the elementally and orbitally resolved GaN valence and conduction bands by recording Ga L and N

Place, publisher, year, edition, pages
AMER INST PHYSICS , 1996. Vol. 54, no 24, 17335-17338 p.
Keyword [en]
PHOTOEMISSION SPECTROSCOPY; VALENCE-BAND; FLUORESCENCE; GRAPHITE; SPECTRA; GROWTH; FILMS
Identifiers
URN: urn:nbn:se:uu:diva-74014OAI: oai:DiVA.org:uu-74014DiVA: diva2:101925
Note
Addresses: Stagarescu CB, BOSTON UNIV, DEPT PHYS, 590 COMMONWEALTH AVE, BOSTON, MA 02215. UNIV UPPSALA, DEPT PHYS, UPPSALA, SWEDEN. BOSTON UNIV, DEPT ELECT & COMP ENGN, BOSTON, MA 02215.Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-15

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