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Anisotropic dry etching of boron doped single crystal CVD diamond
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science. Avdelningen för fasta tillståndets elektronik.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science. elektricitetslära och åskforskning.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science. materialvetenskap.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science. materialvetenskap.
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2005 (English)In: Carbon, ISSN 0008-6223, E-ISSN 1873-3891, Vol. 43, no 9, 1839-1842 p.Article in journal (Refereed) Published
Abstract [en]

Semiconducting boron doped single-crystal CVD diamond has been patterned using aluminum masks and an inductively coupled plasma (ICP) etch system. For comparison insulating HPHT diamond samples were also patterned using the same process. Diamond etch rates above 200 nm/min were obtained with an O2/Ar discharge for a gas pressure of 2.5 mTorr using 600 W RF power. We have accomplished the fabrication of structures with a minimum feature size of 1 μm with vertical sidewalls in both CVD and HPHT diamond. The ICP etching produced smooth surfaces with a typical root-mean-square surface roughness of 3 nm. The dependence of etch rate on bias voltage was somewhat different for the two types of diamond. However, for all samples both the etch rate and anisotropy were found to improve with increasing bias voltage.

Place, publisher, year, edition, pages
2005. Vol. 43, no 9, 1839-1842 p.
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Other Electrical Engineering, Electronic Engineering, Information Engineering
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URN: urn:nbn:se:uu:diva-74101DOI: 10.1016/j.carbon.2005.02.022OAI: oai:DiVA.org:uu-74101DiVA: diva2:102011
Available from: 2007-01-23 Created: 2007-01-23 Last updated: 2017-01-25

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Enlund, JohannesIsberg, JanKarlsson, MikaelNikolajeff, FredrikOlsson, Jörgen

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