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Use of oxygen-stabilized C60 films for selective chemical vapor deposition
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
1997 (English)In: Applied Physics Letters, Vol. 70, no 5, 586-588 p.Article in journal (Refereed) Published
Abstract [en]

Thin C60 films exposed to ultraviolet/visible light in the presence of oxygen were used as a selective mask for tungsten chemical vapor deposition on silicon substrates. An uptake of oxygen in the fullerene films as well as a significant increase in their thermal stability resulted from the simultaneous exposure to the radiation and oxygen. The thermal stability and inertness of these films to tungsten hexaflouride, which is readily reduced by silicon to form the metal at 350 °C, allowed selective deposition of tungsten in both ultrahigh vacuum and low pressure environments. X-ray photoelectron spectroscopy and x-ray fluorescence spectroscopy were used to characterize the tungsten deposited on the C60 mask and the unmasked silicon substrate.

Place, publisher, year, edition, pages
1997. Vol. 70, no 5, 586-588 p.
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Inorganic Chemistry
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URN: urn:nbn:se:uu:diva-74535DOI: doi:10.1063/1.118282OAI: oai:DiVA.org:uu-74535DiVA: diva2:102445
Available from: 2005-10-07 Created: 2005-10-07 Last updated: 2011-01-15

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Jansson, UlfCarlsson, Jan-Otto

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