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Single-phase molybdenum carbide films were deposited on sapphire by CVD from a C60/MoCl5/H2 gas mixture. Mo2C could be grown at substrate temperatures of 600 and 800°C using total pressures of 100 and 10 Torr, respectively. Metastable δ-MoC1−x was also deposited at 800°C by lowering the total pressure to 2 Torr. For a constant mass flow of carrier gas, a high total pressure resulted in an increased growth rate of Mo2C at 600°C, whereas a low total pressure favoured the growth of δ-MoC1−x at 800°C. The films were lustrous and showed good adhesion to the substrate. Resistivities of 56-140 μΩ cm were measured for the single-phase films.