Chemical vapour deposition of molybdenum carbides using C60 as a carbon source
1997 (English)In: Thin Solid Films, Vol. 293, no 1-2, 133-137 p.Article in journal (Refereed) Published
Single-phase molybdenum carbide films were deposited on sapphire by CVD from a C60/MoCl5/H2 gas mixture. Mo2C could be grown at substrate temperatures of 600 and 800°C using total pressures of 100 and 10 Torr, respectively. Metastable δ-MoC1−x was also deposited at 800°C by lowering the total pressure to 2 Torr. For a constant mass flow of carrier gas, a high total pressure resulted in an increased growth rate of Mo2C at 600°C, whereas a low total pressure favoured the growth of δ-MoC1−x at 800°C. The films were lustrous and showed good adhesion to the substrate. Resistivities of 56-140 μΩ cm were measured for the single-phase films.
Place, publisher, year, edition, pages
1997. Vol. 293, no 1-2, 133-137 p.
Carbides, Chemical vapour deposition
IdentifiersURN: urn:nbn:se:uu:diva-74538DOI: doi:10.1016/S0040-6090(96)08987-0OAI: oai:DiVA.org:uu-74538DiVA: diva2:102448
Addresses: UNIV UPPSALA, DEPT INORGAN CHEM, BOX 538, S-75121 UPPSALA, SWEDEN.2006-12-142006-12-142011-01-15