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Simulation of forward bias injection in proton irradiated silicon pn-junctions
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
1996 (English)In: Solid-State Electronics, ISSN 0038-1101, Vol. 39, no 7, 1087-1092 p.Article in journal (Refereed) Published
Abstract [en]

A multilevel recombination model is implemented in the simulation program MEDICI to simulate proton irradiated silicon. First the model is used to simulate charge carrier distributions in proton irradiated silicon p(+)n-diodes in order to evaluate deep le

Place, publisher, year, edition, pages
1996. Vol. 39, no 7, 1087-1092 p.
Keyword [en]
DOPED SILICON
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-74920DOI: 10.1016/0038-1101(95)00417-3OAI: oai:DiVA.org:uu-74920DiVA: diva2:102830
Note

Addresses: Keskitalo N, UNIV UPPSALA, DEPT TECHNOL, POB 534, S-75121 UPPSALA, SWEDEN. UNIV UPPSALA, DEPT RADIAT SCI, DIV ION PHYS, S-75121 UPPSALA, SWEDEN.

Available from: 2007-03-06 Created: 2007-03-06 Last updated: 2013-02-08Bibliographically approved

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Olsson, Jörgen

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