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Lifetime in proton irradiated silicon
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Ion Physics. Electronics. Jonfysik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Ion Physics. Electronics. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Ion Physics. Electronics. Fasta tillståndets elektronik.
1996 (English)In: JOURNAL OF APPLIED PHYSICS, Vol. 79, no 8, 3906-3914 p.Article in journal (Refereed) Published
Abstract [en]

Deep energy levels caused by high-energy low-dose proton irradiation of both n- and p-type silicon have been investigated. Energy positions in the band gap, capture coefficients, and their temperature dependences for majority and minority carrier capture

Place, publisher, year, edition, pages
1996. Vol. 79, no 8, 3906-3914 p.
Keyword [en]
LEVEL TRANSIENT SPECTROSCOPY; RECOMBINATION CENTERS; ELECTRON-IRRADIATION; DOPED SILICON; THYRISTORS; SEMICONDUCTORS; DIVACANCY; TRAPS; IMPLANTATION
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-75035OAI: oai:DiVA.org:uu-75035DiVA: diva2:102945
Note
Addresses: Hallen A, UNIV UPPSALA, DIV ION PHYS, DEPT RADIAT SCI, BOX 535, S-75121 UPPSALA, SWEDEN. UNIV UPPSALA, INST TECHNOL, DEPT ELECTR, S-75121 UPPSALA, SWEDEN. SLOVAK TECH UNIV, DEPT MICROELECTR, BRATISLAVA 81219, SLOVAKIA.Available from: 2007-03-05 Created: 2007-03-05 Last updated: 2011-01-15

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