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Interaction of ultracold antihydrogen with a conducting wall
Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Physical and Analytical Chemistry, Quantum Chemistry.
2005 (English)In: Physical Review A. Atomic, Molecular, and Optical Physics, ISSN 1050-2947, E-ISSN 1094-1622, Vol. 72, no 6, 062903/1-062903/11 p.Article in journal (Refereed) Published
Abstract [en]

We investigate the interaction of ultracold antihydrogen with a conducting surface, focusing on the phenomenon of quantum reflection. We calc. the reflection probability as a function of incident atom energy. We find that, for ground-state H atoms (with T<10-5 K), the probability of reflection is R.simeq.1-kb, where k is the momentum of the atom and b=2174.0 a.u. is a const. detd. solely by the van der Waals-Casimir tail of the atom-wall interaction. We show that quantum reflection, which suppresses the direct contact of ultracold atoms with the surface, allows for the possibility of confinement and storage of sufficiently cold antihydrogen atoms. We calc. the lifetime of H atoms enclosed in between solid walls. We develop a theory of H in a waveguide and propose some applications, notably the measurement of retardation corrections in the long-range component of the antiatom-wall potential. We demonstrate the existence of quantized states for antihydrogen atoms falling onto conducting surface in the gravitational field of Earth. We calc. the lifetime of ultracold H in its lowest gravitational state and obtain t=(Mgb/2h)-1.simeq.0.1 s, where Mg is a gravitational force acting on the antiatom. We propose that measurement of this lifetime may provide a new test for the gravitational properties of antimatter.

Place, publisher, year, edition, pages
2005. Vol. 72, no 6, 062903/1-062903/11 p.
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:uu:diva-75522DOI: 10.1103/PhysRevA.72.062903OAI: oai:DiVA.org:uu-75522DiVA: diva2:103433
Available from: 2007-02-14 Created: 2007-02-14 Last updated: 2011-11-21Bibliographically approved

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Publisher's full texthttp://pra.aps.org/abstract/PRA/v72/i6/e062903

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Froelich, Piotr

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