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MIXED GE-SI DIMER GROWTH AT THE GE/SI(001)-(2X1) SURFACE
Uppsala University.
Uppsala University.
Uppsala University.
Uppsala University.
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1995 (English)In: PHYSICAL REVIEW LETTERS, ISSN 0031-9007, Vol. 75, no 13, 2538-2541 p.Article in journal (Other scientific) Published
Abstract [en]

The submonolayer growth of Ge on single domain Si(001)-(2 X 1) has been studied using high resolution photoemission by monitoring the Ge 3d and Si 2p core levels as functions of coverage, electron emission angle, and annealing temperature. It is shown tha

Place, publisher, year, edition, pages
AMER INST PHYSICS , 1995. Vol. 75, no 13, 2538-2541 p.
Keyword [en]
CORE-LEVEL SHIFTS; SCANNING TUNNELING MICROSCOPY; ENERGY ELECTRON-DIFFRACTION; STRANSKI-KRASTANOV GROWTH; X-RAY PHOTOELECTRON; EPITAXIAL GE; SI(001); SI(100); GE(100); RECONSTRUCTION
Identifiers
URN: urn:nbn:se:uu:diva-75904OAI: oai:DiVA.org:uu-75904DiVA: diva2:103815
Note
Addresses: PATTHEY L, UPPSALA UNIV, DEPT PHYS, BOX 530, S-75121 UPPSALA, SWEDEN. UNIV LAUSANNE, INST PHYS EXPTL, CH-1015 LAUSANNE, SWITZERLAND. TOHOKU UNIV, SCI MEASUREMENTS RES INST, SENDAI, MIYAGI 980, JAPAN. LUND UNIV, INST PHYS, DEPT SYNCHROTRON RADIAAvailable from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-15

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