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Atomic Layer Deposition and Characterization of HfO2 Films on Noble Metal
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
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2005 (English)In: Journal of The Electrochemical Society, Vol. 152, no 7, F75-F82 p.Article in journal (Refereed) Published
Abstract [en]

HfO2 films were grown by atomic layer deposition from HfCl4 and H2O on atomic layer deposited 40-70 nm thick platinum, iridium, and ruthenium films in the temperature range 200-600°C. The phase formed in the 30-50 nm thick HfO2 films was monoclinic HfO2 dominating over amorphous material without noticeable contribution from metastable crystallographic polymorphs. The metal-dielectric-metal capacitor structures formed after evaporating Al gate electrodes demonstrated effective permittivity values in the range 11-16 and breakdown fields reaching 5 MV/cm. Iridium electrode films showed the highest stability in terms of reliability and reproducibility of dielectric characteristics.

Place, publisher, year, edition, pages
2005. Vol. 152, no 7, F75-F82 p.
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Inorganic Chemistry
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URN: urn:nbn:se:uu:diva-75943DOI: doi:10.1149/1.1922888OAI: oai:DiVA.org:uu-75943DiVA: diva2:103854
Available from: 2006-02-22 Created: 2006-02-22 Last updated: 2011-01-11

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Lu, JunHårsta, Anders

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