Atomic Layer Deposition and Characterization of HfO2 Films on Noble Metal
2005 (English)In: Journal of The Electrochemical Society, Vol. 152, no 7, F75-F82 p.Article in journal (Refereed) Published
HfO2 films were grown by atomic layer deposition from HfCl4 and H2O on atomic layer deposited 40-70 nm thick platinum, iridium, and ruthenium films in the temperature range 200-600°C. The phase formed in the 30-50 nm thick HfO2 films was monoclinic HfO2 dominating over amorphous material without noticeable contribution from metastable crystallographic polymorphs. The metal-dielectric-metal capacitor structures formed after evaporating Al gate electrodes demonstrated effective permittivity values in the range 11-16 and breakdown fields reaching 5 MV/cm. Iridium electrode films showed the highest stability in terms of reliability and reproducibility of dielectric characteristics.
Place, publisher, year, edition, pages
2005. Vol. 152, no 7, F75-F82 p.
IdentifiersURN: urn:nbn:se:uu:diva-75943DOI: doi:10.1149/1.1922888OAI: oai:DiVA.org:uu-75943DiVA: diva2:103854