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Shrinking of silicon nanocrystals embedded in an amorphous silicon oxide matrix during rapid thermal annealing in a forming gas atmosphere
Delft Univ Technol, Photovolta Mat & Devices, Mekelweg 4, NL-2628 CD Delft, Netherlands..
Delft Univ Technol, Photovolta Mat & Devices, Mekelweg 4, NL-2628 CD Delft, Netherlands..
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Applied Materials Sciences.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Applied Materials Sciences.
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2016 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 27, no 36, 365601Article in journal (Refereed) Published
Abstract [en]

We report the effect of hydrogen on the crystallization process of silicon nanocrystals embedded in a silicon oxide matrix. We show that hydrogen gas during annealing leads to a lower sub-band gap absorption, indicating passivation of defects created during annealing. Samples annealed in pure nitrogen show expected trends according to crystallization theory. Samples annealed in forming gas, however, deviate from this trend. Their crystallinity decreases for increased annealing time. Furthermore, we observe a decrease in the mean nanocrystal size and the size distribution broadens, indicating that hydrogen causes a size reduction of the silicon nanocrystals.

Place, publisher, year, edition, pages
2016. Vol. 27, no 36, 365601
Keyword [en]
silicon nanocrystals, rapid thermal annealing, oxidation, forming gas, hydrogen, defects, passivation
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:uu:diva-306271DOI: 10.1088/0957-4484/27/36/365601ISI: 000384064400019PubMedID: 27478921OAI: oai:DiVA.org:uu-306271DiVA: diva2:1040178
Available from: 2016-10-26 Created: 2016-10-26 Last updated: 2016-11-02Bibliographically approved

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