Growth of Copper(I) Nitride by ALD Using Copper(II) Hexafluoroacetylacetonate, Water, and Ammonia as Precursors
2006 (English)In: Journal of The Electrochemical Society, Vol. 153, no 3, C146-C151 p.Article in journal (Refereed) Published
Films of copper(I) nitride were deposited by atomic layer deposition (ALD) using copper(II) hexafluoroacetylacetonate, water, and ammonia as precursors. Introduction of a water pulse in the ALD cycle was found to be crucial for initiating film growth on both amorphous SiO2 and single-crystalline -Al2O3(001) substrates. The water pulses generated an oxidic copper monolayer, which in a subsequent ammonia pulse was converted to the nitride. The films have been grown in the temperature range from 210 to 302°C. Phase pure films of Cu3N were obtained up to 265°C. At higher deposition temperatures such as 283°C, phase mixtures of Cu3N and Cu were obtained. For temperatures above 302°C films of only Cu were grown. Film growth rate was the same on the two different substrates. The films were randomly oriented on SiO2. Completely intact films were obtained at a thickness of 20 nm. The optical bandgap of the films was measured to be 1.6 eV.
Place, publisher, year, edition, pages
2006. Vol. 153, no 3, C146-C151 p.
IdentifiersURN: urn:nbn:se:uu:diva-76167DOI: doi:10.1149/1.2160427OAI: oai:DiVA.org:uu-76167DiVA: diva2:104079