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LOW-TEMPERATURE PASSIVATION OF COPPER BY DOPING WITH AL OR MG
Uppsala University.
Uppsala University.
Uppsala University.
Uppsala University.
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1995 (English)In: THIN SOLID FILMS, ISSN 0040-6090, Vol. 262, no 1-2, 234-241 p.Article in journal (Other scientific) Published
Abstract [en]

The doping of copper with Al and Mg is discussed as a method of passivating the exposed surface of copper films proposed for use as a conductor in microelectronics. Doping by co-deposition and by diffusion from Cu/M/SiO2 bilayers, where M = Al or Mg, is d

Place, publisher, year, edition, pages
ELSEVIER SCIENCE SA LAUSANNE , 1995. Vol. 262, no 1-2, 234-241 p.
Keyword [en]
COPPER; ELECTROMIGRATION; ELECTRONIC DEVICES; RESISTIVITY; CORROSION; AMBIENT; FILMS
Identifiers
URN: urn:nbn:se:uu:diva-76252OAI: oai:DiVA.org:uu-76252DiVA: diva2:104164
Note
Addresses: LANFORD WA, UNIV UPPSALA, DEPT PHYS, BOX 530, S-75121 UPPSALA, SWEDEN. SUNY ALBANY, DEPT PHYS, ALBANY, NY 12222. RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12180.Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-15

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