In-situ quartz crystal microbalance investigation of atomic layer deposition of Cu3N
2005 (English)In: Electrochemical Society v. PV 2005-09 EUROCVD-15: Fifteenth European Conference on Chemical Vapor Deposition, 2005, 591-597 p.Conference paper (Refereed)
Place, publisher, year, edition, pages
2005. 591-597 p.
IdentifiersURN: urn:nbn:se:uu:diva-76384OAI: oai:DiVA.org:uu-76384DiVA: diva2:104296
Cu3N is a promising material for optical data storage and copper metallisation. Upon heating the metastable Cu3N decomposes into metallic copper and nitrogen gas. Films have been grown with a novel ALD (Atomic Layer Deposition) process using copper(II) hexafluoroacetylacetonate (Cu(hfac)2), water and ammonia as precursors. By adding an intermediate water pulse the growth rate was enhanced on oxide substrates. The water was used with the purpose of producing sacrificial oxide layers. The mass changes during the deposition cycles were measured by in-situ Quartz Crystal Microbalance (QCM) technique. Extensive hfac removal was observed during Cu(hfac)2 adsorption, yielding a surface composition of Cu(hfac) 0.4 (ad) for short pulses.2006-12-132006-12-13