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Photoluminescence studies in epitaxial CZTSe thin films
Univ Luxembourg, Phys & Mat Sci Res Unit, Lab Photovolta, 41 Rue Brill, L-4422 Belvaux, Luxembourg..
Univ Luxembourg, Phys & Mat Sci Res Unit, Lab Photovolta, 41 Rue Brill, L-4422 Belvaux, Luxembourg..
Univ Luxembourg, Phys & Mat Sci Res Unit, Lab Photovolta, 41 Rue Brill, L-4422 Belvaux, Luxembourg..
Univ Luxembourg, Phys & Mat Sci Res Unit, Lab Photovolta, 41 Rue Brill, L-4422 Belvaux, Luxembourg.;Helmholtz Zentrum Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany..
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2016 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 120, no 12, 125701Article in journal (Refereed) Published
Abstract [en]

Epitaxial Cu2ZnSnSe4 (CZTSe) thin films were grown by molecular beam epitaxy on GaAs(001) using two different growth processes, one containing an in-situ annealing stage as used for solar cell absorbers and one for which this step was omitted. Photoluminescences (PL) measurements carried out on these samples show no dependence of the emission shape on the excitation intensity at different temperatures ranging from 4K to 300 K. To describe the PL measurements, we employ a model with fluctuating band edges in which the density of states of the resulting tail states does not seem to depend on the excited charge carrier density. In this interpretation, the PL measurements show that the annealing stage removes a defect level, which is present in the samples without this annealing.

Place, publisher, year, edition, pages
2016. Vol. 120, no 12, 125701
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Other Physics Topics Engineering and Technology
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URN: urn:nbn:se:uu:diva-307747DOI: 10.1063/1.4962630ISI: 000385560700070OAI: oai:DiVA.org:uu-307747DiVA: diva2:1048389
Available from: 2016-11-21 Created: 2016-11-21 Last updated: 2016-11-25Bibliographically approved

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Li, ShuyiHägglund, CarlPlatzer-Björkman, Charlotte
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