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Epitaxial and textured TiN thin films grown on MgO(100) by reactive HiPIMS: the impact of charging on epitaxial to textured growth crossover
Univ Iceland, Inst Sci, Dunhaga 3, IS-107 Reykjavik, Iceland.;Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany..
Univ Iceland, Inst Sci, Dunhaga 3, IS-107 Reykjavik, Iceland..
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Applied Nuclear Physics.
Univ Iceland, Inst Sci, Dunhaga 3, IS-107 Reykjavik, Iceland..
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2016 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 49, no 45, 455301Article in journal (Refereed) Published
Abstract [en]

Ultra-thin TiN films were grown on MgO(100) substrates by high power impulse magnetron sputtering at growth temperatures of 35 degrees C-400 degrees C. Epitaxial TiN films were obtained when a metallic substrate holder is used, while only textured films were achieved for the films grown by HiPIMS using a substrate holder with a ceramic shadow mask. For the entire range of growth temperatures, the epitaxial films are denser and exhibit a higher growth rate compared to the textured films. Also, chemical composition analysis reveals that all the epitaxial TiN films are N-deficient sub-stoichiometric. As the growth temperature increases, the surface roughness of both epitaxial and textured films decreases, however the epitaxial films generally show less roughness than the textured films. In comparison to epitaxial films previously grown by dc magnetron sputtering, the HiPIMS grown epitaxial films are sub-stoichiometric and according to x-ray measurements, they are in a higher strain state whilst presenting higher film density and atomically smoother surfaces. A HiPIMS-induced negative charging of the TiN islands formed on top of the insulating mask is concluded to be the main reason for the growth mode transition from two dimensional Stranski-Krastanov to three dimensional Volmer-Weber when the shadow mask is used. Acceleration of the ionized species of the HiPIMS plasma including Ti+, N+, and Ti2+ toward the substrate when they approach the substrate holder is the reason for the observed changes in the film densities, growth rates, and surface roughness.

Place, publisher, year, edition, pages
2016. Vol. 49, no 45, 455301
Keyword [en]
thin film, titanium nitride, high power impulse magnetron sputtering, charging effect
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:uu:diva-308620DOI: 10.1088/0022-3727/49/45/455301ISI: 000386430900001OAI: oai:DiVA.org:uu-308620DiVA: diva2:1050940
Funder
Swedish Foundation for Strategic Research
Available from: 2016-11-30 Created: 2016-11-29 Last updated: 2016-11-30Bibliographically approved

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