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DIVACANCY DISTRIBUTIONS IN FAST-ION IRRADIATED SILICON
Uppsala University.
Uppsala University.
1994 (English)In: RADIATION EFFECTS AND DEFECTS IN SOLIDS, ISSN 1042-0150, Vol. 128, no 3, 179-186 p.Article in journal (Other scientific) Published
Abstract [en]

The distributions of divacancies of single negative charge state produced by fast ion irradiation (E greater than or equal to 1 MeV/nucleon) have been established by deep level transient spectroscopy (DLTS). The divacancy concentration profiles from irrad

Place, publisher, year, edition, pages
GORDON BREACH SCI PUBL LTD , 1994. Vol. 128, no 3, 179-186 p.
Keyword [en]
PROTON IRRADIATION; SILICON; LIFETIME; DIVACANCY; STRAGGLING; DLTS; LEVEL TRANSIENT SPECTROSCOPY; PROTON IRRADIATION; DEFECT PRODUCTION; LIFETIME CONTROL; CHARGE STATE; ELECTRON; TRAPS
Identifiers
URN: urn:nbn:se:uu:diva-77341OAI: oai:DiVA.org:uu-77341DiVA: diva2:105253
Note
Addresses: HALLEN A, UNIV UPPSALA, DEPT RADIAT SCI, DIV ION PHYS, POB 535, S-75121 UPPSALA, SWEDEN. ROYAL INST TECHNOL, S-16428 KISTA, SWEDEN.Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-15

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