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Cu2ZnSnSe4 solar cells with 10.6% efficiency through innovative absorber engineering with Ge superficial nanolayer
Catalonia Inst Energy Res, Jardins Dones Negre 1, St Adria De Besos 08930, Barcelona, Spain..
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Applied Materials Sciences.
IMRA Europe SAS, 220 Rue Albert Caquot, F-06904 Sophia Antipolis, France..
Catalonia Inst Energy Res, Jardins Dones Negre 1, St Adria De Besos 08930, Barcelona, Spain..
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2016 (English)In: Progress in Photovoltaics, ISSN 1062-7995, E-ISSN 1099-159X, Vol. 24, no 10, p. 1359-1367Article in journal (Refereed) Published
Abstract [en]

In our recently published work, the positive effect of a Ge nanolayer introduced into the processing of Cu2ZnSnSe4 absorbers (CZTSe) was demonstrated. In this contribution, the complete optimization of this new approach is presented for the first time. Hence, the optimum Ge nanolayer thickness range is defined in order to achieve an improved performance of the devices, obtaining a record efficiency of 10.6%. By employing this optimized approach, the open-circuit voltage (V-OC) is boosted for our pure selenide CZTSe up to 489 mV, leading to V-OC deficit among the lowest reported so far in kesterite technology. Additionally, two important effects related to the Ge are unambiguously demonstrated that might be the origin of the V-OC boost: the improvement of the grain size and the corresponding crystalline quality, and the interaction between Ge and Na that allows for dynamic control over the CZTSe doping. Finally, evidences pointing to the origin of the deterioration of devices properties for large Ge concentrations are presented.

Place, publisher, year, edition, pages
2016. Vol. 24, no 10, p. 1359-1367
Keywords [en]
Cu2ZnSnSe4, kesterite, germanium, Na doping, thin-film photovoltaics
National Category
Energy Systems Nano Technology
Identifiers
URN: urn:nbn:se:uu:diva-308777DOI: 10.1002/pip.2797ISI: 000386072200007OAI: oai:DiVA.org:uu-308777DiVA, id: diva2:1054635
Available from: 2016-12-08 Created: 2016-11-30 Last updated: 2017-11-29Bibliographically approved

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Thersleff, ThomasLeifer, Klaus

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